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Rapid thermal annealing of donor implants in gallium arsenide

Rachid Bensalem, Auteur ; Brian J. Sealy, Directeur de thèse | University of Surrey | 1986

Rapid thermal annealing was used to produce n+ surface layers in tin- and selenium-implanted GaAs. Hall effect and differential Van der Pauw measurements were performed and peak electron carrier concentrations of about 9 x 10¹⁸ cm-³ with corres[...]

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