Degradation failure mode of transistors / M. E. H. Louhibi (1985)

Public ISBD Titre : Degradation failure mode of transistors Type de document : texte imprimé Auteurs : M. E. H. Louhibi, Auteur ; A. Z. Keller, Directeur de thèse Editeur : Bradford : University of Bradford Année de publication : 1985 Importance : 174 f. Présentation : ill. Format : 30 cm. Note générale : Mémoire de Master : Electrotechnique : Bradford, University of Bradford : 1985 Annexe f. 175 - 193. Bibliogr.: f. 194 - 195 Langues : Anglais (eng) Mots-clés : Semiconductor devices reliability Solid-state semuconductor Index. décimale : Ms01285 Résumé : Since their conception, solid-state semuconductor devices have always been regarded as having the potential of high reliability. This expectation was not diminished by the fact that early devices were characterised by lower lifetimes since it was quickly recognised that the sources of the device failure were the result of the relatively primitive technology. Research and development in the field of solid-state devices has concerned itself with two important problems. On one hand we have device physics, whose aim is to understand in terms of basic physical concepts the mode of failure of the various devices. In this way, one seeks to optimise the high reliability technology in order to achieve the best performance from each device. The second aspect of this work is to establish a distribution which fits data and gives a very good result. The objective of this thesis is to identify and investigate various modes of degradation which impair the reliability of the semiconductor devices and fit the log-normal and exponential distributions to the available data, using the least square and maximum likelihood methods for the estimation of the parameters. Degradation failure mode of transistors [texte imprimé] / M. E. H. Louhibi, Auteur ; A. Z. Keller, Directeur de thèse . - Bradford : University of Bradford, 1985 . - 174 f. : ill. ; 30 cm. Mémoire de Master : Electrotechnique : Bradford, University of Bradford : 1985 Annexe f. 175 - 193. Bibliogr.: f. 194 - 195 Langues : Anglais (eng) Mots-clés : Semiconductor devices reliability Solid-state semuconductor Index. décimale : Ms01285 Résumé : Since their conception, solid-state semuconductor devices have always been regarded as having the potential of high reliability. This expectation was not diminished by the fact that early devices were characterised by lower lifetimes since it was quickly recognised that the sources of the device failure were the result of the relatively primitive technology. Research and development in the field of solid-state devices has concerned itself with two important problems. On one hand we have device physics, whose aim is to understand in terms of basic physical concepts the mode of failure of the various devices. In this way, one seeks to optimise the high reliability technology in order to achieve the best performance from each device. The second aspect of this work is to establish a distribution which fits data and gives a very good result. The objective of this thesis is to identify and investigate various modes of degradation which impair the reliability of the semiconductor devices and fit the log-normal and exponential distributions to the available data, using the least square and maximum likelihood methods for the estimation of the parameters.

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Code-barres	Cote	Support	Localisation	Section	Disponibilité	Spécialité	Etat_Exemplaire
Ms01285	Ms01285	Papier	Bibliothèque centrale	Mémoire de Master	Disponible