Investigations of some defects in gaas and some transport properties of gaas/(AIGa) as heterojunctions / Khaled Bousbahi (1985)

Public ISBD Titre : Investigations of some defects in gaas and some transport properties of gaas/(AIGa) as heterojunctions Type de document : texte imprimé Auteurs : Khaled Bousbahi, Auteur ; L. Eaves, Directeur de thèse Editeur : Nottingham : [s.n.] Année de publication : 1985 Importance : 92 f. Présentation : ill. Format : 30 cm Note générale : PhD Thesis : Physics : University of Nottingham : 1986 Bibliogr. en fin de chapitre Langues : Anglais (eng) Mots-clés : Investigations Gas Transport properties Index. décimale : D006885 Résumé : The major part of this thesis describes experimental investigations of a deep level, labelled EL2 in GaAs. The methods employed include high resolution optical absorption, photoluminescence and two dimensional infra-red (IR) imaging. The experiments were performed between room temperature and liquid helium temperature. The samples used were undoped and cr-doped semi-insulating (SI) GaAs grown by the liquid encapsulation czochralski technique. One chapter of this thesis is devoted to the investigation of the polaron effect in a two-dimensional electron gas (2DEG) as represented by the interface in the semi-conductor heterostructure (GaAl)As/GaAs. This heterostructure is grown by the molecular beam epitxy (MBE) technique on a SI GaAs substrate. The method used is the magnetophonon resonance effect derived from the measurements of the transverse magnetoresistance against a sweeping magnetic field up to a value of 20 tesla. The temperature range being 100K to 150K. Investigations of some defects in gaas and some transport properties of gaas/(AIGa) as heterojunctions [texte imprimé] / Khaled Bousbahi, Auteur ; L. Eaves, Directeur de thèse . - Nottingham : [s.n.], 1985 . - 92 f. : ill. ; 30 cm. PhD Thesis : Physics : University of Nottingham : 1986 Bibliogr. en fin de chapitre Langues : Anglais (eng) Mots-clés : Investigations Gas Transport properties Index. décimale : D006885 Résumé : The major part of this thesis describes experimental investigations of a deep level, labelled EL2 in GaAs. The methods employed include high resolution optical absorption, photoluminescence and two dimensional infra-red (IR) imaging. The experiments were performed between room temperature and liquid helium temperature. The samples used were undoped and cr-doped semi-insulating (SI) GaAs grown by the liquid encapsulation czochralski technique. One chapter of this thesis is devoted to the investigation of the polaron effect in a two-dimensional electron gas (2DEG) as represented by the interface in the semi-conductor heterostructure (GaAl)As/GaAs. This heterostructure is grown by the molecular beam epitxy (MBE) technique on a SI GaAs substrate. The method used is the magnetophonon resonance effect derived from the measurements of the transverse magnetoresistance against a sweeping magnetic field up to a value of 20 tesla. The temperature range being 100K to 150K.

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Code-barres	Cote	Support	Localisation	Section	Disponibilité	Spécialité	Etat_Exemplaire
D006885	D006885	Papier	Bibliothèque Annexe	Thèse de Doctorat	Disponible	Autre	Consultation sur place