| Titre : | Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas |
| Auteurs : | Qijin Cheng, Auteur ; Shuyan Xu, Auteur ; Kostya (Ken) Ostrikov, Auteur |
| Type de document : | Article : texte imprimé |
| Dans : | Acta materialia (Vol. 58 N° 2, Janvier 2010) |
| Article en page(s) : | pp. 560-569 |
| Note générale : | Métallurgie |
| Langues : | Anglais |
| Index. décimale : | 669 (Métallurgie) |
| Tags : | Chemical vapor deposition Quantum dots Inductively coupled plasmas Solar cells |
| Résumé : |
A simple, effective and innovative approach based on low-pressure, thermally nonequilibrium, high-density inductively coupled plasmas is proposed to rapidly synthesize Si quantum dots (QDs) embedded in an amorphous SiC (a-SiC) matrix at a low substrate temperature and without any commonly used hydrogen dilution.
The experimental results clearly demonstrate that uniform crystalline Si QDs with a size of 3–4 nm embedded in the silicon-rich (carbon content up to 10.7at.%) a-SiC matrix can be formed from the reactive mixture of silane and methane gases, with high growth rates of not, vert, similar1.27–2.34 nm s−1 and at a low substrate temperature of 200°C. The achievement of the high-rate growth of Si QDs embedded in the a-SiC without any commonly used hydrogen dilution is discussed based on the unique properties of the inductively coupled plasma-based process. This work is particularly important for the development of the all-Si tandem cell-based third generation photovoltaic solar cells. |
| DEWEY : | 669 |
| ISSN : | 1359-6454 |
| En ligne : | http://www.sciencedirect.com/science?_ob=PublicationURL&_tockey=%23TOC%235556%232010%23999419997%231562200%23FLA%23&_cdi=5556&_pubType=J&_auth=y&_acct=C000070790&_version=1&_urlVersion=0&_userid=6909337&md5=b76b02a9bf437ba6ba8077be7b9830f5 |
