Nos Abonnements
Ressources Électroniques
Détail de l'éditeur
Institut National d'Electricité et d'Electronique INELEC |
Documents disponibles chez cet éditeur (8)
Ajouter le résultat dans votre panier
Visionner les documents numériques
Faire une suggestion Affiner la recherche
Titre : Algorithms for the factorization of matrix polynomials Type de document : texte imprimé Auteurs : Abdelhakim Dahimene, Auteur ; K. Hariche, Directeur de thèse Editeur : Institut National d'Electricité et d'Electronique INELEC Année de publication : 1992 Importance : 137 f. Format : 30 cm. Note générale : Mémoire de Magister : Electronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992
Bibliogr. f. 138 - 142Langues : Anglais (eng) Mots-clés : Scalar -- polynomials Broyden's method Linear systems Quotient-difference algorithm Index. décimale : M004292 Résumé : The factorization (root finding) of scalar polynomials is an important tool of analysis and design for linear systems.
This thesis is a part of an ongoing effort to generalize these tools to multivariable systems via the factorization of matrix polynomials.
The main contributions of this thesis can be summarized as follows:
1/ The development of the Q.D. algorithm, which is a global method capable of producing a complete factorization of a matrix polynomial;
2/ Establishment of an existence theorem for the Q.D. algorithm;
3/ Production of convergence theorems for the Q.D. algorithm;
4/ Study of the initialization of the algorithm;
5/ Applicability of Broyden's method to matrix polynomial problems.
As a by-product, some important results have been produced:
6/ Location of the latent roots of a matrix polynomial in the complex plane;
7/ Investigation of the existence of the solvents of a monic matrix polynomial;
8/ Derivation of an incomplite partial fraction expansion of a matrix rational fraction.Algorithms for the factorization of matrix polynomials [texte imprimé] / Abdelhakim Dahimene, Auteur ; K. Hariche, Directeur de thèse . - Institut National d'Electricité et d'Electronique INELEC, 1992 . - 137 f. ; 30 cm.
Mémoire de Magister : Electronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992
Bibliogr. f. 138 - 142
Langues : Anglais (eng)
Mots-clés : Scalar -- polynomials Broyden's method Linear systems Quotient-difference algorithm Index. décimale : M004292 Résumé : The factorization (root finding) of scalar polynomials is an important tool of analysis and design for linear systems.
This thesis is a part of an ongoing effort to generalize these tools to multivariable systems via the factorization of matrix polynomials.
The main contributions of this thesis can be summarized as follows:
1/ The development of the Q.D. algorithm, which is a global method capable of producing a complete factorization of a matrix polynomial;
2/ Establishment of an existence theorem for the Q.D. algorithm;
3/ Production of convergence theorems for the Q.D. algorithm;
4/ Study of the initialization of the algorithm;
5/ Applicability of Broyden's method to matrix polynomial problems.
As a by-product, some important results have been produced:
6/ Location of the latent roots of a matrix polynomial in the complex plane;
7/ Investigation of the existence of the solvents of a monic matrix polynomial;
8/ Derivation of an incomplite partial fraction expansion of a matrix rational fraction.Réservation
Réserver ce document
Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité Spécialité Etat_Exemplaire M004292 M004292 Papier + ressource électronique Bibliothèque Annexe Mémoire de Magister Disponible Electronique Consultation sur place/Téléchargeable Documents numériques
DAHIMENE.Abdelhakim.pdfURLCharge-extraction technique for studying the surface-states in MOS devices / Bouderbala, Rachid (1992)
Titre : Charge-extraction technique for studying the surface-states in MOS devices Type de document : texte imprimé Auteurs : Bouderbala, Rachid, Auteur ; Ved Mitra, Directeur de thèse Editeur : Institut National d'Electricité et d'Electronique INELEC Année de publication : 1992 Importance : 191 f. Présentation : ill. Format : 30 cm. Note générale : Mémoire de Magister : Electronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992
Bibliogr. f. 192 - 198Langues : Anglais (eng) Mots-clés : Charge pumping technique MOS devices Oxide properties Interface trapped charges Index. décimale : M004192 Résumé : The present thesis is devoted to give a comprehensive account of the charge pumping technique, scope and exploration of an alternative approach and accomplishment and development of a new technique called charge extraction technique for studying the interface properties of MOS devices.
The whole thesis is presented in the form of 8 chapters.
After introducing the subject in the present chapter, chapter 2 is devoted to the background study of the MOS structure itself covering all its essential features, characteristics and aspects which are relevant in the further development of the subject.
In chapter 3, the properties of the Si-SiO2 and, in particular, all those factors which contribute to the non-ideality of MOS structure are examined and their effect on the electrical characteristics are discussed.
We end this chapter by examining briefly the impact that the fabrication technology may have on the generation and/or on the reduction of these electrically active defects.
Chapter 4 is centred around the capacitance methods.
All those techniques, which are common in use such as the differentiation method, the integration method, the conductance method, and the DLTS technique, are presented in details whereas the others, which are more or less of historical interest only, are presented briefly.
Chapter 5 introduces the basic concepts needed to identify, understand, and analyse the phenomenon of charge pumping technique which is followed by a mathematical analysis and a few limitations of the technique.
A brief account of the other developments on charge pumping technique is also presented.
Chapter 6 covers the required instrumentation for the implementation and use of the charge pumping technique along with the details concerning the actual devices and the measuring set-up.
The experimental results of the charge pumping technique are presented and discussed.
Finally, the results obtained by the new technique are discussed and compared to those found by the charge pumping technique.
In chapter 7, a theory of the new technique, called charge-extraction technique for studying the interface traps in MOS devices, is presented.
Finally chapter 8 concludes with a discussion on the usefulness and future scope of the work presented in this thesis.Charge-extraction technique for studying the surface-states in MOS devices [texte imprimé] / Bouderbala, Rachid, Auteur ; Ved Mitra, Directeur de thèse . - Institut National d'Electricité et d'Electronique INELEC, 1992 . - 191 f. : ill. ; 30 cm.
Mémoire de Magister : Electronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992
Bibliogr. f. 192 - 198
Langues : Anglais (eng)
Mots-clés : Charge pumping technique MOS devices Oxide properties Interface trapped charges Index. décimale : M004192 Résumé : The present thesis is devoted to give a comprehensive account of the charge pumping technique, scope and exploration of an alternative approach and accomplishment and development of a new technique called charge extraction technique for studying the interface properties of MOS devices.
The whole thesis is presented in the form of 8 chapters.
After introducing the subject in the present chapter, chapter 2 is devoted to the background study of the MOS structure itself covering all its essential features, characteristics and aspects which are relevant in the further development of the subject.
In chapter 3, the properties of the Si-SiO2 and, in particular, all those factors which contribute to the non-ideality of MOS structure are examined and their effect on the electrical characteristics are discussed.
We end this chapter by examining briefly the impact that the fabrication technology may have on the generation and/or on the reduction of these electrically active defects.
Chapter 4 is centred around the capacitance methods.
All those techniques, which are common in use such as the differentiation method, the integration method, the conductance method, and the DLTS technique, are presented in details whereas the others, which are more or less of historical interest only, are presented briefly.
Chapter 5 introduces the basic concepts needed to identify, understand, and analyse the phenomenon of charge pumping technique which is followed by a mathematical analysis and a few limitations of the technique.
A brief account of the other developments on charge pumping technique is also presented.
Chapter 6 covers the required instrumentation for the implementation and use of the charge pumping technique along with the details concerning the actual devices and the measuring set-up.
The experimental results of the charge pumping technique are presented and discussed.
Finally, the results obtained by the new technique are discussed and compared to those found by the charge pumping technique.
In chapter 7, a theory of the new technique, called charge-extraction technique for studying the interface traps in MOS devices, is presented.
Finally chapter 8 concludes with a discussion on the usefulness and future scope of the work presented in this thesis.Réservation
Réserver ce document
Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité Spécialité Etat_Exemplaire M004192 M004192 Papier + ressource électronique Bibliothèque Annexe Mémoire de Magister Disponible Electronique Consultation sur place/Téléchargeable Documents numériques
BOUDERBALA.Rachid.pdfURL
Titre : Density distribution of mobile ions in the oxide of MOS structures Type de document : texte imprimé Auteurs : Bentarzi, Hamid, Auteur ; Ved Mitra, Directeur de thèse Editeur : Institut National d'Electricité et d'Electronique INELEC Année de publication : 1992 Importance : 144 f. Présentation : ill. Format : 27 cm. Note générale : Mémoire de Magister : Electronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992
Bibliogr. f. 145 - 156 . Annexe f. 157 - 161Langues : Anglais (eng) Mots-clés : Mobile ion -- distribution MOS structures Oxides Density Index. décimale : M004092 Résumé : The present work aims to study the mobile ion distribution in the oxides of MOS structures.
The subject is introduced with the necessary background concept of MOS structure dealing with various aspects of oxide and its charges.
A review is then presented on the measuring techniques of mobile charge concentration in the oxides.
This is followed by our new approaches to determine the density-distribution of the mobile ions along the oxide thickness of a MOS structure.
In fact we have made two attempts each of which makes use of a different approch.
In the first attempt, the equilibrium density-distribution of the mobile ions has been determined from the experimentally measured values of its flat-band voltage under three different conditions, namely, before contamination/activation, after contamination/activation and then after ion-drift due to thermal electric stressing.
However in the other attempt a theoretical model for the density-dis-tribution of the mobile ions has been developed which is based on the concept that at any point in the oxide the equilibrium.Density distribution of mobile ions in the oxide of MOS structures [texte imprimé] / Bentarzi, Hamid, Auteur ; Ved Mitra, Directeur de thèse . - Institut National d'Electricité et d'Electronique INELEC, 1992 . - 144 f. : ill. ; 27 cm.
Mémoire de Magister : Electronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992
Bibliogr. f. 145 - 156 . Annexe f. 157 - 161
Langues : Anglais (eng)
Mots-clés : Mobile ion -- distribution MOS structures Oxides Density Index. décimale : M004092 Résumé : The present work aims to study the mobile ion distribution in the oxides of MOS structures.
The subject is introduced with the necessary background concept of MOS structure dealing with various aspects of oxide and its charges.
A review is then presented on the measuring techniques of mobile charge concentration in the oxides.
This is followed by our new approaches to determine the density-distribution of the mobile ions along the oxide thickness of a MOS structure.
In fact we have made two attempts each of which makes use of a different approch.
In the first attempt, the equilibrium density-distribution of the mobile ions has been determined from the experimentally measured values of its flat-band voltage under three different conditions, namely, before contamination/activation, after contamination/activation and then after ion-drift due to thermal electric stressing.
However in the other attempt a theoretical model for the density-dis-tribution of the mobile ions has been developed which is based on the concept that at any point in the oxide the equilibrium.Réservation
Réserver ce document
Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité Spécialité Etat_Exemplaire M004092 M004092 Papier + ressource électronique Bibliothèque Annexe Mémoire de Magister Disponible Electronique Consultation sur place/Téléchargeable Documents numériques
BENTARZI.Hamid.pdfURL
Titre : Effet of frequency on the substrate current in MOS devices Type de document : texte imprimé Auteurs : Arezki Benfdila, Auteur ; Ved Mitra, Directeur de thèse Editeur : Institut National d'Electricité et d'Electronique INELEC Année de publication : 1992 Importance : 150 f. Présentation : ill. Format : 27 cm. Note générale : Mémoire de Magister : Électronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992
Bibliogr. f. 151 - 157 Annexe f. 159 - 167Langues : Anglais (eng) Mots-clés : Metal oxide semiconductor Charge pumping technique Circuits electrinics Index. décimale : M003992 Résumé : Control of the electrical properties of the MOS (Metal Oxide Semiconductor) systems has been one of the major factors that has led to stable and high performance integrated circuits.
The MOS capacitor (or MOS Diode) is used in both monitoring integrated circuit fabrication and studying the electrical properties of the MOS system.
During this study an unusual phenomenon marked by the presence of a new current has been observed.
This current is found to exhibit quite distinct properties so as to distinguish it not only from the charge pumping current but also from any hitherto known substrate current.
The present work is devoted to carry out at first an extensive experimentation to serve the purpose of as much more fact-finding and data collection as possible.
The data and information so collected is then put to some practical applications.
However, before taking up the proposed work, a few earlier chapters are devoted to the background study of MOS structure and other related phenomena which are needed for the further understanding and development of the subject.
In chapter 2, a study of the MOS structure operated under different modes is presented.
As the present study involves do conduction through the oxide, various do conduction phenomena in the oxide are described in chapter 3.
One of the characterization technique recently developed, using the substrate current as a means to extract information, is the charge-pumping technique.
As the present study is also based on the measurement of the substrate current, which is supposed to arise due to some process of charging and discharging of the surface traps in charge pumping technique, the present technique based on the observed new phenomenon may be supposed as an alternate approach to the charge pumping technique.
Based on these considerations the charge pumping technique needs special treatment which is presented in chapter 4.
After preparing the required background, chapter 5 is used to describe the experrimental set-up and devices used in the present experimentation.
All experimental details how the whole experimental arrangement is made to operate and give output results automatically are also given in the same chapter.
The different results obtained in this work along with the various conclusions drawn on the basis of these results are presented in chapter 6.
In chapter 7, one of the most important use of the present study, which is the determination of the flatband and threshold voltages in MOS devices, is presented.
Finally, chapter 8 concludes with certain remarks on the future scope and usefulness of the present study.
However they are rather qualitative because of the poor understanding of the physical phenomena involved.Effet of frequency on the substrate current in MOS devices [texte imprimé] / Arezki Benfdila, Auteur ; Ved Mitra, Directeur de thèse . - Institut National d'Electricité et d'Electronique INELEC, 1992 . - 150 f. : ill. ; 27 cm.
Mémoire de Magister : Électronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992
Bibliogr. f. 151 - 157 Annexe f. 159 - 167
Langues : Anglais (eng)
Mots-clés : Metal oxide semiconductor Charge pumping technique Circuits electrinics Index. décimale : M003992 Résumé : Control of the electrical properties of the MOS (Metal Oxide Semiconductor) systems has been one of the major factors that has led to stable and high performance integrated circuits.
The MOS capacitor (or MOS Diode) is used in both monitoring integrated circuit fabrication and studying the electrical properties of the MOS system.
During this study an unusual phenomenon marked by the presence of a new current has been observed.
This current is found to exhibit quite distinct properties so as to distinguish it not only from the charge pumping current but also from any hitherto known substrate current.
The present work is devoted to carry out at first an extensive experimentation to serve the purpose of as much more fact-finding and data collection as possible.
The data and information so collected is then put to some practical applications.
However, before taking up the proposed work, a few earlier chapters are devoted to the background study of MOS structure and other related phenomena which are needed for the further understanding and development of the subject.
In chapter 2, a study of the MOS structure operated under different modes is presented.
As the present study involves do conduction through the oxide, various do conduction phenomena in the oxide are described in chapter 3.
One of the characterization technique recently developed, using the substrate current as a means to extract information, is the charge-pumping technique.
As the present study is also based on the measurement of the substrate current, which is supposed to arise due to some process of charging and discharging of the surface traps in charge pumping technique, the present technique based on the observed new phenomenon may be supposed as an alternate approach to the charge pumping technique.
Based on these considerations the charge pumping technique needs special treatment which is presented in chapter 4.
After preparing the required background, chapter 5 is used to describe the experrimental set-up and devices used in the present experimentation.
All experimental details how the whole experimental arrangement is made to operate and give output results automatically are also given in the same chapter.
The different results obtained in this work along with the various conclusions drawn on the basis of these results are presented in chapter 6.
In chapter 7, one of the most important use of the present study, which is the determination of the flatband and threshold voltages in MOS devices, is presented.
Finally, chapter 8 concludes with certain remarks on the future scope and usefulness of the present study.
However they are rather qualitative because of the poor understanding of the physical phenomena involved.Réservation
Réserver ce document
Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité Spécialité Etat_Exemplaire M003992 M003992 Papier + ressource électronique Bibliothèque Annexe Mémoire de Magister Disponible Electronique Consultation sur place/Téléchargeable Documents numériques
BENFDILA.Arezki.pdfURL
Titre : Hybrid-mode analysis of microwave and millimeter-wave structures of realistic configuration Type de document : texte imprimé Auteurs : Ouadi, Abderrahmane, Auteur ; Bourdoucen, H., Directeur de thèse Editeur : Institut National d'Electricité et d'Electronique INELEC Année de publication : 1995 Importance : 139 f. Présentation : ill. Format : 30 cm. Note générale : Mémoire de Magister : Électronique : Boumerdès, Institut National d’Électricité et d’Électronique : 1995
Bibliogr. [8] f. Annexe [1] fLangues : Anglais (eng) Mots-clés : Analysis of microwave Millimeter-wave structures Realistic configuration Structures based on isotropic Anisotropic substrates finline Index. décimale : M005095 Résumé : In this research work, the rigorous hybrid-mode full-wave analysis is used for an accurate characterization of planar and quasi-planar microwave and millimeter-wave structures, required by the spectacular growth of microwave technology. The method of lines is used as a mathematical tool for solving the associated eigenvalue problems, for modelling the dispersive properties of the aforementioned structures. The frequency dependent characterization of general planar multilayer multiconductor waveguiding structures based on isotropic and/or anisotropic substrates, has been established by using directly field components or suitable Hertzian potential functions formulations. This technique has also been applied for the analysis of structures with finite metallization thickness, in order to improve the modelling of planar microwave circuit structures that are of reduced size and operating at higher frequencies. Furthermore, the E-plane planar circuits, particularly finline structures, have been investigated with practical considerations.
In addition to the substrate anisotropy and finite metal thickness parameters, the sidewall grooves, used in an actual realization to support mechanically the substrate, has been accounted for an efficient analysis of this kind of structures. Particular interest is directed to the analysis of isolated unilateral finline configurations which are suitable for mounting semiconductor devices, where one or both fins are isolated by a gasket which allows a dc voltage to be developed across the fins. The numerical results obtained by the developed algorithm are found to agree excellently with the published data for a wide range of planar microwave and millimeter-wave structures. The effect of the technological parameters such as substrate anisotropy, strip thickness, side-wall groove depth and insulating gasket height have been also discussed.Hybrid-mode analysis of microwave and millimeter-wave structures of realistic configuration [texte imprimé] / Ouadi, Abderrahmane, Auteur ; Bourdoucen, H., Directeur de thèse . - Institut National d'Electricité et d'Electronique INELEC, 1995 . - 139 f. : ill. ; 30 cm.
Mémoire de Magister : Électronique : Boumerdès, Institut National d’Électricité et d’Électronique : 1995
Bibliogr. [8] f. Annexe [1] f
Langues : Anglais (eng)
Mots-clés : Analysis of microwave Millimeter-wave structures Realistic configuration Structures based on isotropic Anisotropic substrates finline Index. décimale : M005095 Résumé : In this research work, the rigorous hybrid-mode full-wave analysis is used for an accurate characterization of planar and quasi-planar microwave and millimeter-wave structures, required by the spectacular growth of microwave technology. The method of lines is used as a mathematical tool for solving the associated eigenvalue problems, for modelling the dispersive properties of the aforementioned structures. The frequency dependent characterization of general planar multilayer multiconductor waveguiding structures based on isotropic and/or anisotropic substrates, has been established by using directly field components or suitable Hertzian potential functions formulations. This technique has also been applied for the analysis of structures with finite metallization thickness, in order to improve the modelling of planar microwave circuit structures that are of reduced size and operating at higher frequencies. Furthermore, the E-plane planar circuits, particularly finline structures, have been investigated with practical considerations.
In addition to the substrate anisotropy and finite metal thickness parameters, the sidewall grooves, used in an actual realization to support mechanically the substrate, has been accounted for an efficient analysis of this kind of structures. Particular interest is directed to the analysis of isolated unilateral finline configurations which are suitable for mounting semiconductor devices, where one or both fins are isolated by a gasket which allows a dc voltage to be developed across the fins. The numerical results obtained by the developed algorithm are found to agree excellently with the published data for a wide range of planar microwave and millimeter-wave structures. The effect of the technological parameters such as substrate anisotropy, strip thickness, side-wall groove depth and insulating gasket height have been also discussed.Réservation
Réserver ce document
Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité Spécialité Etat_Exemplaire M005095 M005095 Papier + ressource électronique Bibliothèque Annexe Mémoire de Magister Disponible Electronique Consultation sur place/Téléchargeable Documents numériques
OUADI.Abderrahmane.pdfURL
Permalink
