| Titre : | New transient detection circuit for on-chip protection design against system-level electrical-transient disturbance (2011) |
| Auteurs : | Ming-Dou, Ker, Auteur ; Cheng-Cheng, Yen, Auteur |
| Type de document : | Article : texte imprimé |
| Dans : | IEEE transactions on industrial electronics (Vol. 57 N° 10, Octobre 2010) |
| Article en page(s) : | pp. 3533 - 3543 |
| Note générale : | Génie élecrique |
| Langues : | Anglais |
| Index. décimale : | 621.38 (Dispositifs électroniques. Tubes à électrons. Photocellules. Accélérateurs de particules. Tubes à rayons X) |
| Tags : | Electrical-fast-transient (EFT) test Electromagnetic compatibility Electrostatic discharge (ESD) System-level esd Transientdetection circui |
| Résumé : | A new transient detection circuit for on-chip protection design against system-level electrical-transient disturbance is proposed in this paper. The circuit function to detect positive or negative electrical transients under system-level electrostatic-discharge (ESD) and electrical-fast-transient (EFT) testing conditions has been investigated by HSPICE simulation and verified in silicon chip. The experimental results in a 0.18-μm complementary-metal-oxide-semiconductor (CMOS) process have confirmed that the new proposed on-chip transient detection circuit can successfully memorize the occurrence of system-level electrical-transient disturbance events. The output of the proposed on-chip transient detection circuit can be used as a firmware index to execute the system recovery procedure. With hardware/firmware codesign, the transient disturbance immunity of microelectronic products equipped with CMOS integrated circuits under system-level ESD or EFT tests can be significantly improved. |
| DEWEY : | 621.38 |
| ISSN : | 0278-0046 |
| En ligne : | http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5406116 |
