| Titre : | Broadband anti-reflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature (2011) |
| Auteurs : | Neng Wan, Auteur ; Jun Xu, Auteur ; Guran Chen, Auteur |
| Type de document : | Article : texte imprimé |
| Dans : | Acta materialia (Vol. 58 N° 8, Mai 2010) |
| Article en page(s) : | pp. 3068–3072 |
| Note générale : | Métallurgie |
| Langues : | Anglais |
| Tags : | ITO Nanostructure e-Beam evaporation Field emission Anti-reflection |
| Résumé : | Small-sized indium tin oxide (ITO) nanowires were fabricated using the electron beam evaporation (EBE) technique at low temperature (∼150 °C) without adding any catalyst. The ITO nanowires have a typical diameter of around 10 nm and a length of more than 100 nm, with body-centered cubic crystal structures that grow along the 〈1 0 0〉 directions, as revealed by transmission electron microscopy. The growth mechanism of the branched ITO nanowires was found to be a vapor–solid process. The nanowire films show a broadband anti-reflection property due to the graded refraction index from the film surface to the substrate. Enhanced field emission properties with a low turn-on electric field and a high field enhancement factor were also observed in the ITO nanowires. |
| DEWEY : | 669 |
| ISSN : | 1359-6454 |
| En ligne : | http://www.sciencedirect.com/science/article/pii/S1359645410000558 |
