| Titre : | Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN (2011) |
| Auteurs : | J.M. Mánuel, Auteur ; F.M. Morales, Auteur ; J.G. Lozano, Auteur |
| Type de document : | Article : texte imprimé |
| Dans : | Acta materialia (Vol. 58 N° 12, Juillet 2010) |
| Article en page(s) : | pp. 4120–4125 |
| Note générale : | Métallurgie |
| Langues : | Anglais |
| Tags : | Compound semiconductor (InAlN) Lattice-matched Elastic behavior Transmission electron microscopy (TEM) Secondary ion mass spectroscopy (SIMS) |
| Résumé : | A group of InAlN films was fabricated by molecular beam epitaxy and investigated by X-ray diffraction, transmission electron microscopy and element nano-analyses. All top InxAl1−xN layers have compositions around lateral lattice-matching to GaN (x ≈ 0.18) and are pseudomorphic. For a growth rate of 350 nm h−1, each InAlN film separated into two sublayers with different In/Al-ratios. Micrographs reveal sharp transitions both at the InAlN/GaN and at the InAlN/InAlN interfaces. In contrast to these separated layers, an optimized epitaxy using an AlN interlayer and a lower growth rate, 100 nm h−1, enabled the fabrication of a single-phase InxAl1−xN layer on GaN, homogeneous on a nanoscopic scale. |
| DEWEY : | 669 |
| ISSN : | 1359-6454 |
| En ligne : | http://www.sciencedirect.com/science/article/pii/S1359645410002077 |
