| Titre : | Tunnel junction based memories |
| Auteurs : | Anes Bouchenak Khelladi, Auteur ; Mourad Haddadi, Directeur de thèse |
| Type de document : | texte imprimé |
| Editeur : | [S.l.] : [s.n.], 2012 |
| Format : | 57 f. / ill. / 30 cm. |
| Accompagnement : | 1 CD-ROM. |
| Note générale : |
Mémoire de Projet de Fin d'Etudes: Electronique: Alger, Ecole Nationale Polytechnique: 2012
Annexes f. 58 - 71 . - Bibliogr. f. 72 |
| Langues : | Anglais |
| Index. décimale : | PN00412 |
| Tags : | Non-volatile memories RAMs Tunnel junctions Spintronics Ferromagnetic Ferroelectric |
| Résumé : |
Computers and other types of systems require the permanent or semi-permanent storage of large amounts of binary data and Memory is the portion of these systems which do it and in large quantities.
The quest for a non-volatile memory technology that offers high storage density, high read and writes speeds, and low power consumption has triggered intense research into new materials, mechanisms and device architectures. The successful memory technologies emerging from these efforts have been the atomic switch, the resistive RAM and the magnetic tunnel junction. Researchers in this domain report a substantial advance in an alternative approach to non-volatile memory technology based on ferroelectric tunnel junctions achieving very low write powers, in a highly reproducible manner. |
Exemplaires (1)
| Cote | Support | Localisation | Section | Disponibilité | Spécialité | Etat_Exemplaire |
|---|---|---|---|---|---|---|
| PN00412 | Papier + ressource électronique | Bibliothèque centrale | Projet Fin d'Etudes | Disponible | Electronique | Consultation sur place/Téléchargeable |
Documents numériques (1)
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BOUCHENAK KHELLADI.Anes.pdf URL
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