Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas / Qijin Cheng in Acta materialia, Vol. 58 N° 2 (Janvier 2010)  

Public ISBD [article]  inActa materialia > Vol. 58 N° 2 (Janvier 2010) . - pp. 560-569 Titre : Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas Type de document : texte imprimé Auteurs : Qijin Cheng, Auteur ; Shuyan Xu, Auteur ; Kostya (Ken) Ostrikov, Auteur Article en page(s) : pp. 560-569 Note générale : Métallurgie Langues : Anglais (eng) Mots-clés : Chemical vapor deposition Quantum dots Inductively coupled plasmas Solar cells Index. décimale : 669 Métallurgie Résumé : A simple, effective and innovative approach based on low-pressure, thermally nonequilibrium, high-density inductively coupled plasmas is proposed to rapidly synthesize Si quantum dots (QDs) embedded in an amorphous SiC (a-SiC) matrix at a low substrate temperature and without any commonly used hydrogen dilution. The experimental results clearly demonstrate that uniform crystalline Si QDs with a size of 3–4 nm embedded in the silicon-rich (carbon content up to 10.7at.%) a-SiC matrix can be formed from the reactive mixture of silane and methane gases, with high growth rates of not, vert, similar1.27–2.34 nm s−1 and at a low substrate temperature of 200°C. The achievement of the high-rate growth of Si QDs embedded in the a-SiC without any commonly used hydrogen dilution is discussed based on the unique properties of the inductively coupled plasma-based process. This work is particularly important for the development of the all-Si tandem cell-based third generation photovoltaic solar cells. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science?_ob=PublicationURL&_tockey=%23TOC%235556%23 [...] [article] Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas [texte imprimé] / Qijin Cheng, Auteur ; Shuyan Xu, Auteur ; Kostya (Ken) Ostrikov, Auteur . - pp. 560-569. Métallurgie Langues : Anglais (eng) in Acta materialia > Vol. 58 N° 2 (Janvier 2010) . - pp. 560-569 Mots-clés : Chemical vapor deposition Quantum dots Inductively coupled plasmas Solar cells Index. décimale : 669 Métallurgie Résumé : A simple, effective and innovative approach based on low-pressure, thermally nonequilibrium, high-density inductively coupled plasmas is proposed to rapidly synthesize Si quantum dots (QDs) embedded in an amorphous SiC (a-SiC) matrix at a low substrate temperature and without any commonly used hydrogen dilution. The experimental results clearly demonstrate that uniform crystalline Si QDs with a size of 3–4 nm embedded in the silicon-rich (carbon content up to 10.7at.%) a-SiC matrix can be formed from the reactive mixture of silane and methane gases, with high growth rates of not, vert, similar1.27–2.34 nm s−1 and at a low substrate temperature of 200°C. The achievement of the high-rate growth of Si QDs embedded in the a-SiC without any commonly used hydrogen dilution is discussed based on the unique properties of the inductively coupled plasma-based process. This work is particularly important for the development of the all-Si tandem cell-based third generation photovoltaic solar cells. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science?_ob=PublicationURL&_tockey=%23TOC%235556%23 [...]

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