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Infrared radiative properties of heavily doped silicon at room temperature / S. Basu in Journal of heat transfer, Vol. 132 N° 2 (n° spécial) (Fevrier 2010) 

Public ISBD [article]  in Journal of heat transfer > Vol. 132 N° 2 (n° spécial) (Fevrier 2010) . - pp. [023301-1/8] Titre : Infrared radiative properties of heavily doped silicon at room temperature Type de document : texte imprimé Auteurs : S. Basu, Auteur ; B. J. Lee, Auteur ; Z. M. Zhang, Auteur Article en page(s) : pp. [023301-1/8] Note générale : Physique Langues : Anglais (eng) Mots-clés : Microscale  Doped  silicon  Radiative  properties  Thin  films Index. décimale : 536 Chaleur. Thermodynamique Résumé : This paper describes an experimental investigation on the infrared radiative properties of heavily doped Si at room temperature. Lightly doped Si wafers were ion-implanted with either boron or phosphorus atoms, with dosages corresponding to as-implanted peak doping concentrations of 1020 and 1021 cm−3; the peak doping concentrations after annealing are 3.1×1019 and 2.8×1020 cm−3, respectively. Rapid thermal annealing was performed to activate the implanted dopants. A Fourier-transform infrared spectrometer was employed to measure the transmittance and reflectance of the samples in the wavelength range from 2 µm to 20 µm. Accurate carrier mobility and ionization models were identified after carefully reviewing the available literature, and then incorporated into the Drude model to predict the dielectric function of doped Si. The radiative properties of doped Si samples were calculated by treating the doped region as multilayer thin films of different doping concentrations on a thick lightly doped Si substrate. The measured spectral transmittance and reflectance agree well with the model predictions. The knowledge gained from this study will aid future design and fabrication of doped Si microstructures as wavelength selective emitters and absorbers in the midinfrared region. DEWEY : 536 ISSN : 0022-1481 En ligne : http://asmedl.aip.org/vsearch/servlet/VerityServlet?KEY=JHTRAO&ONLINE=YES&smode= [...] [article] Infrared radiative properties of heavily doped silicon at room temperature [texte imprimé] / S. Basu, Auteur ; B. J. Lee, Auteur ; Z. M. Zhang, Auteur . - pp. [023301-1/8]. Physique Langues : Anglais (eng) in Journal of heat transfer > Vol. 132 N° 2 (n° spécial) (Fevrier 2010) . - pp. [023301-1/8] Mots-clés : Microscale  Doped  silicon  Radiative  properties  Thin  films Index. décimale : 536 Chaleur. Thermodynamique Résumé : This paper describes an experimental investigation on the infrared radiative properties of heavily doped Si at room temperature. Lightly doped Si wafers were ion-implanted with either boron or phosphorus atoms, with dosages corresponding to as-implanted peak doping concentrations of 1020 and 1021 cm−3; the peak doping concentrations after annealing are 3.1×1019 and 2.8×1020 cm−3, respectively. Rapid thermal annealing was performed to activate the implanted dopants. A Fourier-transform infrared spectrometer was employed to measure the transmittance and reflectance of the samples in the wavelength range from 2 µm to 20 µm. Accurate carrier mobility and ionization models were identified after carefully reviewing the available literature, and then incorporated into the Drude model to predict the dielectric function of doped Si. The radiative properties of doped Si samples were calculated by treating the doped region as multilayer thin films of different doping concentrations on a thick lightly doped Si substrate. The measured spectral transmittance and reflectance agree well with the model predictions. The knowledge gained from this study will aid future design and fabrication of doped Si microstructures as wavelength selective emitters and absorbers in the midinfrared region. DEWEY : 536 ISSN : 0022-1481 En ligne : http://asmedl.aip.org/vsearch/servlet/VerityServlet?KEY=JHTRAO&ONLINE=YES&smode= [...]

Near-field radiation calculated with an improved dielectric function model for doped silicon / S. Basu in Journal of heat transfer, Vol. 132 N° 2 (n° spécial) (Fevrier 2010) 

Public ISBD [article]  in Journal of heat transfer > Vol. 132 N° 2 (n° spécial) (Fevrier 2010) . - pp. [023302-1/7] Titre : Near-field radiation calculated with an improved dielectric function model for doped silicon Type de document : texte imprimé Auteurs : S. Basu, Auteur ; B. J. Lee, Auteur ; Z. M. Zhang, Auteur Article en page(s) : pp. [023302-1/7] Note générale : Physique Langues : Anglais (eng) Mots-clés : Doped  silicon  Lateral  shift  Near-field  radiation Index. décimale : 536 Chaleur. Thermodynamique Résumé : This paper describes a theoretical investigation of near-field radiative heat transfer between doped silicon surfaces separated by a vacuum gap. An improved dielectric function model for heavily doped silicon is employed. The effects of doping level, polarization, and vacuum gap width on the spectral and total radiative transfer are studied based on the fluctuational electrodynamics. It is observed that increasing the doping concentration does not necessarily enhance the energy transfer in the near-field. The energy streamline method is used to model the lateral shift of the energy pathway, which is the trace of the Poynting vectors in the vacuum gap. The local density of states near the emitter is calculated with and without the receiver. The results from this study can help improve the understanding of near-field radiation for applications such as thermophotovoltaic energy conversion, nanoscale thermal imaging, and nanothermal manufacturing. DEWEY : 536 ISSN : 0022-1481 En ligne : http://asmedl.aip.org/vsearch/servlet/VerityServlet?KEY=JHTRAO&ONLINE=YES&smode= [...] [article] Near-field radiation calculated with an improved dielectric function model for doped silicon [texte imprimé] / S. Basu, Auteur ; B. J. Lee, Auteur ; Z. M. Zhang, Auteur . - pp. [023302-1/7]. Physique Langues : Anglais (eng) in Journal of heat transfer > Vol. 132 N° 2 (n° spécial) (Fevrier 2010) . - pp. [023302-1/7] Mots-clés : Doped  silicon  Lateral  shift  Near-field  radiation Index. décimale : 536 Chaleur. Thermodynamique Résumé : This paper describes a theoretical investigation of near-field radiative heat transfer between doped silicon surfaces separated by a vacuum gap. An improved dielectric function model for heavily doped silicon is employed. The effects of doping level, polarization, and vacuum gap width on the spectral and total radiative transfer are studied based on the fluctuational electrodynamics. It is observed that increasing the doping concentration does not necessarily enhance the energy transfer in the near-field. The energy streamline method is used to model the lateral shift of the energy pathway, which is the trace of the Poynting vectors in the vacuum gap. The local density of states near the emitter is calculated with and without the receiver. The results from this study can help improve the understanding of near-field radiation for applications such as thermophotovoltaic energy conversion, nanoscale thermal imaging, and nanothermal manufacturing. DEWEY : 536 ISSN : 0022-1481 En ligne : http://asmedl.aip.org/vsearch/servlet/VerityServlet?KEY=JHTRAO&ONLINE=YES&smode= [...]