Auteur B. J. Lee
Documents disponibles écrits par cet auteur (2)
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Article : texte imprimé
S. Basu, Auteur ; B. J. Lee, Auteur ; Z. M. Zhang, Auteur |This paper describes an experimental investigation on the infrared radiative properties of heavily doped Si at room temperature. Lightly doped Si wafers were ion-implanted with either boron or phosphorus atoms, with dosages corresponding to as-i[...]
Article : texte imprimé
S. Basu, Auteur ; B. J. Lee, Auteur ; Z. M. Zhang, Auteur |This paper describes a theoretical investigation of near-field radiative heat transfer between doped silicon surfaces separated by a vacuum gap. An improved dielectric function model for heavily doped silicon is employed. The effects of doping l[...]
