Auteur Z. M. Zhang
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Documents disponibles écrits par cet auteur (6)
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L. P. Wang, Auteur ; S. Basu, Auteur ; Z. M. Zhang, Auteur |The determination of emissivity of layered structures is critical in many applications, such as radiation thermometry, microelectronics, radiative cooling, and energy harvesting. Two different approaches, i.e., the “indirect” and “direct” method[...]![]()
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L. P. Wang, Auteur ; S. Basu, Auteur ; Z. M. Zhang, Auteur |There have been growing interests in selective control of thermal emission by using micro/nanostructures. The present study describes direct measurements of infrared thermal emission at elevated temperatures of an asymmetric Fabry–Perot resonato[...]![]()
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T. J. Bright, Auteur ; Z. M. Zhang, Auteur |One of the approaches for micro/nanoscale heat transfer in semiconductors and dielectric materials is to use the Boltzmann transport equation, which reduces to the equation of phonon radiative transfer under the relaxation time approximation. Tr[...]![]()
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S. Basu, Auteur ; B. J. Lee, Auteur ; Z. M. Zhang, Auteur |This paper describes an experimental investigation on the infrared radiative properties of heavily doped Si at room temperature. Lightly doped Si wafers were ion-implanted with either boron or phosphorus atoms, with dosages corresponding to as-i[...]![]()
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S. Basu, Auteur ; B. J. Lee, Auteur ; Z. M. Zhang, Auteur |This paper describes a theoretical investigation of near-field radiative heat transfer between doped silicon surfaces separated by a vacuum gap. An improved dielectric function model for heavily doped silicon is employed. The effects of doping l[...]![]()
Article : texte imprimé
Z. M. Zhang, Auteur ; E. T. Enikov, Auteur ; T. Makansi, Auteur |SiGe alloys represent an important type of high-temperature semiconductor material for solid-state energy conversion. In the present study, the near-field radiative heat transfer between heavily doped SiGe plates is investigated. A dielectric fu[...]


