| Titre : | Unexpected slip mechanism induced by the reduced dimensions in silicon nanostructures : Atomistic study (2012) |
| Auteurs : | Julien Guénolé, Auteur ; Sandrine Brochard, Auteur ; Julien Godet, Auteur |
| Type de document : | Article : texte imprimé |
| Dans : | Acta materialia (Vol. 59 N° 20, Décembre 2011) |
| Article en page(s) : | pp. 7464–7472 |
| Note générale : | Métallurgie |
| Langues : | Anglais |
| Tags : | Dislocation Semiconductors Plastic deformation Simulation |
| Résumé : | We have performed molecular dynamics simulations and first-principles calculations to investigate the first stages of plasticity in single-crystalline silicon nanostructures free of initial defects, under compressive and tensile strain along the [0 0 1] axis. In compression especially, we observe the activation of {0 1 1} planes, both in nanowires and in thin films, regardless of the temperature and the interatomic potential used. The occurrence of such an unexpected slip system can be explained by a careful investigation of the generalized stacking fault energy under different stress conditions, and the associated restoring forces. Finally, the activation of the {0 1 1} planes is shown to be an indirect consequence of the small dimensions of the nanostructures considered. |
| ISSN : | 1359-6454 |
| En ligne : | http://www.sciencedirect.com/science/article/pii/S1359645411006161 |
