Molecular dynamics simulation of phonon scattering at silicon/germanium interfaces / Lin Sun in Journal of heat transfer, Vol. 132 N° 10 (Octobre 2010)  

Public ISBD [article]  inJournal of heat transfer > Vol. 132 N° 10 (Octobre 2010) . - pp. [102403/1-9] Titre : Molecular dynamics simulation of phonon scattering at silicon/germanium interfaces Type de document : texte imprimé Auteurs : Lin Sun, Auteur ; Jayathi Y. Murthy, Auteur Année de publication : 2010 Article en page(s) : pp. [102403/1-9] Note générale : Physique Langues : Anglais (eng) Mots-clés : Molecular dynamics Phonon transport Interface Wave packet Index. décimale : 536 Chaleur. Thermodynamique Résumé : Detailed phonon transport at Si/Ge interfaces is studied using the molecular dynamics wave-packet method. Three types of interfaces are investigated: A smooth interface, an interface with random roughness, and an interface with a regularly patterned roughness. The phonon transmissivity for each case is calculated as a function of phonon frequency, roughness characteristic length, and atomic structure. For a smooth interface, the transmissivities predicted by the MD simulations agree well with the acoustic mismatch model based on the continuum assumption. The rough interface simulation results indicate that random roughness is the source of incoherent phonon scattering and decreases the phonon transmission. Periodic structures such as the regularly patterned roughness employed in this paper cause strong phonon wave interference and may restore phonon transmission as the layer thickness increases. DEWEY : 536 ISSN : 0022-1481 En ligne : http://asmedl.aip.org/vsearch/servlet/VerityServlet?KEY=JHTRAO&ONLINE=YES&smode= [...] [article] Molecular dynamics simulation of phonon scattering at silicon/germanium interfaces [texte imprimé] / Lin Sun, Auteur ; Jayathi Y. Murthy, Auteur . - 2010 . - pp. [102403/1-9]. Physique Langues : Anglais (eng) in Journal of heat transfer > Vol. 132 N° 10 (Octobre 2010) . - pp. [102403/1-9] Mots-clés : Molecular dynamics Phonon transport Interface Wave packet Index. décimale : 536 Chaleur. Thermodynamique Résumé : Detailed phonon transport at Si/Ge interfaces is studied using the molecular dynamics wave-packet method. Three types of interfaces are investigated: A smooth interface, an interface with random roughness, and an interface with a regularly patterned roughness. The phonon transmissivity for each case is calculated as a function of phonon frequency, roughness characteristic length, and atomic structure. For a smooth interface, the transmissivities predicted by the MD simulations agree well with the acoustic mismatch model based on the continuum assumption. The rough interface simulation results indicate that random roughness is the source of incoherent phonon scattering and decreases the phonon transmission. Periodic structures such as the regularly patterned roughness employed in this paper cause strong phonon wave interference and may restore phonon transmission as the layer thickness increases. DEWEY : 536 ISSN : 0022-1481 En ligne : http://asmedl.aip.org/vsearch/servlet/VerityServlet?KEY=JHTRAO&ONLINE=YES&smode= [...]

Exemplaires

Code-barres	Cote	Support	Localisation	Section	Disponibilité
aucun exemplaire