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New transient detection circuit for on-chip protection design against system-level electrical-transient disturbance / Ming-Dou, Ker in IEEE transactions on industrial electronics, Vol. 57 N° 10 (Octobre 2010) 

Public ISBD [article]  in IEEE transactions on industrial electronics > Vol. 57 N° 10 (Octobre 2010) . - pp. 3533 - 3543 Titre : New transient detection circuit for on-chip protection design against system-level electrical-transient disturbance Type de document : texte imprimé Auteurs : Ming-Dou, Ker, Auteur ; Cheng-Cheng, Yen, Auteur Année de publication : 2011 Article en page(s) : pp. 3533 - 3543 Note générale : Génie élecrique Langues : Anglais (eng) Mots-clés : Electrical-fast-transient  (EFT)  test  Electromagnetic  compatibility  Electrostatic  discharge  (ESD)  System-level  esd  test  Transientdetection  circui Index. décimale : 621.38 Dispositifs électroniques. Tubes à électrons. Photocellules. Accélérateurs de particules. Tubes à rayons X Résumé : A new transient detection circuit for on-chip protection design against system-level electrical-transient disturbance is proposed in this paper. The circuit function to detect positive or negative electrical transients under system-level electrostatic-discharge (ESD) and electrical-fast-transient (EFT) testing conditions has been investigated by HSPICE simulation and verified in silicon chip. The experimental results in a 0.18-μm complementary-metal-oxide-semiconductor (CMOS) process have confirmed that the new proposed on-chip transient detection circuit can successfully memorize the occurrence of system-level electrical-transient disturbance events. The output of the proposed on-chip transient detection circuit can be used as a firmware index to execute the system recovery procedure. With hardware/firmware codesign, the transient disturbance immunity of microelectronic products equipped with CMOS integrated circuits under system-level ESD or EFT tests can be significantly improved. DEWEY : 621.38 ISSN : 0278-0046 En ligne : http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5406116 [article] New transient detection circuit for on-chip protection design against system-level electrical-transient disturbance [texte imprimé] / Ming-Dou, Ker, Auteur ; Cheng-Cheng, Yen, Auteur . - 2011 . - pp. 3533 - 3543. Génie élecrique Langues : Anglais (eng) in IEEE transactions on industrial electronics > Vol. 57 N° 10 (Octobre 2010) . - pp. 3533 - 3543 Mots-clés : Electrical-fast-transient  (EFT)  test  Electromagnetic  compatibility  Electrostatic  discharge  (ESD)  System-level  esd  test  Transientdetection  circui Index. décimale : 621.38 Dispositifs électroniques. Tubes à électrons. Photocellules. Accélérateurs de particules. Tubes à rayons X Résumé : A new transient detection circuit for on-chip protection design against system-level electrical-transient disturbance is proposed in this paper. The circuit function to detect positive or negative electrical transients under system-level electrostatic-discharge (ESD) and electrical-fast-transient (EFT) testing conditions has been investigated by HSPICE simulation and verified in silicon chip. The experimental results in a 0.18-μm complementary-metal-oxide-semiconductor (CMOS) process have confirmed that the new proposed on-chip transient detection circuit can successfully memorize the occurrence of system-level electrical-transient disturbance events. The output of the proposed on-chip transient detection circuit can be used as a firmware index to execute the system recovery procedure. With hardware/firmware codesign, the transient disturbance immunity of microelectronic products equipped with CMOS integrated circuits under system-level ESD or EFT tests can be significantly improved. DEWEY : 621.38 ISSN : 0278-0046 En ligne : http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5406116