Détail de l'auteur
Auteur Fei Wang |
Documents disponibles écrits par cet auteur (7)



Development of a Scalable Power Semiconductor Switch (SPSS) / Wang, Hongfang in IEEE transactions on power electronics, Vol. 22 N°2 (Mars 2007)
[article]
Titre : Development of a Scalable Power Semiconductor Switch (SPSS) Titre original : Développement d'un commutateur de semi-conducteur de puissance de Scalable (SPSS) Type de document : texte imprimé Auteurs : Wang, Hongfang, Auteur ; Huang, Alex Q., Auteur ; Fei Wang, Auteur Année de publication : 2007 Article en page(s) : 364-373 p. Note générale : Electronique Langues : Anglais (eng) Mots-clés : High frequency Switch voltage switich Series connection Voltage balance Index. décimale : 621.31 Production,approvisionnement et contrôle de l'électricité.Machines et appareils électriques.Mesure électrique.Magnétisme et électrostatique appliquées
Résumé : This paper presents the design and development of a 4800-V, 300-A, 10-kHz scalable power semiconductor switch (SPSS) based on series connecting low voltage insulated gate bipolar transistors (IGBTs). The static and dynamic voltage balance among IGBTs is achieved using a hybrid approach of active clamp circuit and an active gate control that is also effective during tail current phase. The developed SPSS derives its control power directly from the main power bus. Control, packaging, and thermal characteristics are an integral part of the SPSS design. From a user's standpoint, the SPSS is a three-terminal optically controlled high-power switch. Experimental evaluation of the prototype SPSS shows it fully achieved the design objectives. In principle, the approach can be extended to building switches with higher voltages, currents, and switching frequencies, or even with other types of devices than IGBTs.
Cet article présente la conception et le développement d'un 4800-V, 300-A, le commutateur scalable de semi-conducteur de la puissance 10-kHz (SPSS) basé sur la série reliant les transistors bipolaires isolés de porte de basse tension (IGBTs). L'équilibre statique et dynamique de tension parmi IGBTs est réalisé en utilisant une approche hybride de circuit actif de bride et d'une commande active de porte qui est également efficace pendant la phase de courant de queue. Le SPSS développé dérive sa puissance de commande directement de l'autobus de puissance principale. La commande, l'empaquetage, et les caractéristiques thermiques sont une partie intégrale de la conception de SPSS. Du point de vue d'un utilisateur, le SPSS est un commutateur de haute puissance à commande optique de trois-borne. Évaluation expérimentale des expositions du prototype SPSS il a entièrement atteint les objectifs de conception. En principe, l'approche peut être prolongée aux commutateurs de bâtiment avec des tensions, des courants, et des fréquences plus élevés de commutation, ou même avec d'autres types de dispositifs qu'IGBTs.DEWEY : 621 ISSN : 0885-8993 RAMEAU : Commutation (électricité)-- Semiconducteurs
in IEEE transactions on power electronics > Vol. 22 N°2 (Mars 2007) . - 364-373 p.[article] Development of a Scalable Power Semiconductor Switch (SPSS) = Développement d'un commutateur de semi-conducteur de puissance de Scalable (SPSS) [texte imprimé] / Wang, Hongfang, Auteur ; Huang, Alex Q., Auteur ; Fei Wang, Auteur . - 2007 . - 364-373 p.
Electronique
Langues : Anglais (eng)
in IEEE transactions on power electronics > Vol. 22 N°2 (Mars 2007) . - 364-373 p.
Mots-clés : High frequency Switch voltage switich Series connection Voltage balance Index. décimale : 621.31 Production,approvisionnement et contrôle de l'électricité.Machines et appareils électriques.Mesure électrique.Magnétisme et électrostatique appliquées
Résumé : This paper presents the design and development of a 4800-V, 300-A, 10-kHz scalable power semiconductor switch (SPSS) based on series connecting low voltage insulated gate bipolar transistors (IGBTs). The static and dynamic voltage balance among IGBTs is achieved using a hybrid approach of active clamp circuit and an active gate control that is also effective during tail current phase. The developed SPSS derives its control power directly from the main power bus. Control, packaging, and thermal characteristics are an integral part of the SPSS design. From a user's standpoint, the SPSS is a three-terminal optically controlled high-power switch. Experimental evaluation of the prototype SPSS shows it fully achieved the design objectives. In principle, the approach can be extended to building switches with higher voltages, currents, and switching frequencies, or even with other types of devices than IGBTs.
Cet article présente la conception et le développement d'un 4800-V, 300-A, le commutateur scalable de semi-conducteur de la puissance 10-kHz (SPSS) basé sur la série reliant les transistors bipolaires isolés de porte de basse tension (IGBTs). L'équilibre statique et dynamique de tension parmi IGBTs est réalisé en utilisant une approche hybride de circuit actif de bride et d'une commande active de porte qui est également efficace pendant la phase de courant de queue. Le SPSS développé dérive sa puissance de commande directement de l'autobus de puissance principale. La commande, l'empaquetage, et les caractéristiques thermiques sont une partie intégrale de la conception de SPSS. Du point de vue d'un utilisateur, le SPSS est un commutateur de haute puissance à commande optique de trois-borne. Évaluation expérimentale des expositions du prototype SPSS il a entièrement atteint les objectifs de conception. En principe, l'approche peut être prolongée aux commutateurs de bâtiment avec des tensions, des courants, et des fréquences plus élevés de commutation, ou même avec d'autres types de dispositifs qu'IGBTs.DEWEY : 621 ISSN : 0885-8993 RAMEAU : Commutation (électricité)-- Semiconducteurs Exemplaires
Code-barres Cote Support Localisation Section Disponibilité aucun exemplaire Electrical capacitance volume tomography imaging of three - dimensional flow structures and solids concentration distributions in a riser and a bend of a gas – solid circulating fluidized bed / Fei Wang in Industrial & engineering chemistry research, Vol. 51 N° 33 (Août 2012)
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Titre : Electrical capacitance volume tomography imaging of three - dimensional flow structures and solids concentration distributions in a riser and a bend of a gas – solid circulating fluidized bed Type de document : texte imprimé Auteurs : Fei Wang, Auteur ; Qussai Marashdeh, Auteur ; Aining Wang, Auteur Année de publication : 2012 Article en page(s) : pp. 10968-10976 Note générale : Industrial chemistry Langues : Anglais (eng) Mots-clés : Circulating fluidized bed Fluidization Gas solid Riser Concentration distribution Three dimensional flow Imaging Tomography Capacitance Résumé : Electrical capacitance volume tomography (ECVT) is a newly developed imaging technique that can quantify three-dimensional (3D) multiphase flows in a complex, geometric flow field. In this study, the 3D phase distribution images inside a gas―solid circulating fluidized bed (CFB) are obtained using ECVT. Specifically, measurements are made at a riser section and a 90° bend-shape riser exit section of the CFB. Inside the vertical riser, a symmetric core―annulus structure with a low solids holdup in the riser center along with a high solids holdup near the riser wall is observed. The average volume solids holdup and the thickness of the annulus decrease with the superficial gas velocity. A core―annulus flow structure is formed both in the vertical and horizontal parts of the bend. The annulus structure is noncentro-symmetric in the horizontal part of the bend. The solids holdup in the annulus near the top wall area in the bend is higher than that in other locations of the annulus. At a higher superficial gas velocity in the riser, the centrifugal acceleration increases due to high solids velocity in the bend, and more solids are separated to the outside of the bend from the main stream. A "reversed-S" shape solids holdup distribution along the diagonal line is also observed. The solids holdup increases and then decreases from the outer comer to the center of the bend, which indicates that a relatively dilute region is formed near the outer corner of the bend. ISSN : 0888-5885 En ligne : http://cat.inist.fr/?aModele=afficheN&cpsidt=26286471
in Industrial & engineering chemistry research > Vol. 51 N° 33 (Août 2012) . - pp. 10968-10976[article] Electrical capacitance volume tomography imaging of three - dimensional flow structures and solids concentration distributions in a riser and a bend of a gas – solid circulating fluidized bed [texte imprimé] / Fei Wang, Auteur ; Qussai Marashdeh, Auteur ; Aining Wang, Auteur . - 2012 . - pp. 10968-10976.
Industrial chemistry
Langues : Anglais (eng)
in Industrial & engineering chemistry research > Vol. 51 N° 33 (Août 2012) . - pp. 10968-10976
Mots-clés : Circulating fluidized bed Fluidization Gas solid Riser Concentration distribution Three dimensional flow Imaging Tomography Capacitance Résumé : Electrical capacitance volume tomography (ECVT) is a newly developed imaging technique that can quantify three-dimensional (3D) multiphase flows in a complex, geometric flow field. In this study, the 3D phase distribution images inside a gas―solid circulating fluidized bed (CFB) are obtained using ECVT. Specifically, measurements are made at a riser section and a 90° bend-shape riser exit section of the CFB. Inside the vertical riser, a symmetric core―annulus structure with a low solids holdup in the riser center along with a high solids holdup near the riser wall is observed. The average volume solids holdup and the thickness of the annulus decrease with the superficial gas velocity. A core―annulus flow structure is formed both in the vertical and horizontal parts of the bend. The annulus structure is noncentro-symmetric in the horizontal part of the bend. The solids holdup in the annulus near the top wall area in the bend is higher than that in other locations of the annulus. At a higher superficial gas velocity in the riser, the centrifugal acceleration increases due to high solids velocity in the bend, and more solids are separated to the outside of the bend from the main stream. A "reversed-S" shape solids holdup distribution along the diagonal line is also observed. The solids holdup increases and then decreases from the outer comer to the center of the bend, which indicates that a relatively dilute region is formed near the outer corner of the bend. ISSN : 0888-5885 En ligne : http://cat.inist.fr/?aModele=afficheN&cpsidt=26286471 Exemplaires
Code-barres Cote Support Localisation Section Disponibilité aucun exemplaire Experimental and numerical studies of water droplet impact on a porous surface in the film-Boiling regime / Zhao Yu in Industrial & engineering chemistry research, Vol. 47 N° 23 (Décembre 2008)
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[article]
Titre : Experimental and numerical studies of water droplet impact on a porous surface in the film-Boiling regime Type de document : texte imprimé Auteurs : Zhao Yu, Auteur ; Fei Wang, Auteur ; L.-S. Fan, Auteur Année de publication : 2009 Article en page(s) : p. 9174–9182 Note générale : Chemistry engineering Langues : Anglais (eng) Mots-clés : Experimental and Numerical Studies Water Droplet Film-Boiling Regime Résumé : An experimental and numerical study of the water droplet in collision with a porous surface in the film-boiling regime is reported. The porous substrate with a porosity of 34% and pore size of 76 nm is heated to 300 °C, and the motion of the droplet is recorded by a high-speed digital camera. A new three-dimensional (3-D) numerical model is developed to account for the transport phenomenon both inside and outside the porous media, by coupling the flow field with the heat and mass transfer process. The vapor layer model is used as a subgrid model to calculate the induced vapor pressure in the narrow region between the droplet and the surface. The vapor mass transfer is modeled considering the vapor generation and transport mechanisms in different domains. Direct numerical simulation is performed under the same conditions as the experiment, and the simulation results for the droplet behavior are in good agreement with the experimental results. The collision of a water droplet on the porous surface shows similar features to those on nonporous surfaces in the film-boiling regime, probably because of the small pore size of the material used in the current study. However, the droplet has a longer residence time, and it also seems to be less stable on the porous surface. En ligne : http://pubs.acs.org/doi/abs/10.1021/ie800479r
in Industrial & engineering chemistry research > Vol. 47 N° 23 (Décembre 2008) . - p. 9174–9182[article] Experimental and numerical studies of water droplet impact on a porous surface in the film-Boiling regime [texte imprimé] / Zhao Yu, Auteur ; Fei Wang, Auteur ; L.-S. Fan, Auteur . - 2009 . - p. 9174–9182.
Chemistry engineering
Langues : Anglais (eng)
in Industrial & engineering chemistry research > Vol. 47 N° 23 (Décembre 2008) . - p. 9174–9182
Mots-clés : Experimental and Numerical Studies Water Droplet Film-Boiling Regime Résumé : An experimental and numerical study of the water droplet in collision with a porous surface in the film-boiling regime is reported. The porous substrate with a porosity of 34% and pore size of 76 nm is heated to 300 °C, and the motion of the droplet is recorded by a high-speed digital camera. A new three-dimensional (3-D) numerical model is developed to account for the transport phenomenon both inside and outside the porous media, by coupling the flow field with the heat and mass transfer process. The vapor layer model is used as a subgrid model to calculate the induced vapor pressure in the narrow region between the droplet and the surface. The vapor mass transfer is modeled considering the vapor generation and transport mechanisms in different domains. Direct numerical simulation is performed under the same conditions as the experiment, and the simulation results for the droplet behavior are in good agreement with the experimental results. The collision of a water droplet on the porous surface shows similar features to those on nonporous surfaces in the film-boiling regime, probably because of the small pore size of the material used in the current study. However, the droplet has a longer residence time, and it also seems to be less stable on the porous surface. En ligne : http://pubs.acs.org/doi/abs/10.1021/ie800479r Exemplaires
Code-barres Cote Support Localisation Section Disponibilité aucun exemplaire Gas - solid fluidization in mini- and micro-channels / Fei Wang in Industrial & engineering chemistry research, Vol. 50 N° 8 (Avril 2011)
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Titre : Gas - solid fluidization in mini- and micro-channels Type de document : texte imprimé Auteurs : Fei Wang, Auteur ; Liang-Shih Fan, Auteur Année de publication : 2011 Article en page(s) : pp. 4741–4751 Note générale : Chimie industrielle Langues : Anglais (eng) Mots-clés : Gas solid fluidization Résumé : Much of the fundamental research reported in the literature on gas−solid fluidization properties has been performed with large gas−solid fluidized beds. However, little is known regarding gas−solid fluidization in the mini- and microscale channel sizes ranging from 10−3 to 10−2 m and 10−5 to 10−4 m, respectively. The wall effects in the mini- and microchannels significantly affect the hydrodynamics of gas−solid fluidization. Such effects are examined experimentally in this study using FCC particles in six mini- and microchannels with sizes ranging from 700 μm to 5 mm. The data reveal a significant increase in the minimum fluidization and bubbling velocities as well as the wall friction in the mini- and microchannels compared to those in large fluidized beds. Additionally, the maximum stable bubble size increases with the superficial gas velocity and channel size. The round-nosed slug and the wall slug are observed in the channels. Correlations for predicting the fluidization regime transition in large fluidized beds are not adequate for predicting that in the mini- and microchannels. Also, differing from fluidization in a large bed, there is regime transition instability in that particulate fluidization is observed to form in the 700 μm and 1 mm channels through the bubbling/slugging transition as the gas velocity increases beyond that for the fixed bed. DEWEY : 660 ISSN : 0888-5885 En ligne : http://pubs.acs.org/doi/abs/10.1021/ie102245m
in Industrial & engineering chemistry research > Vol. 50 N° 8 (Avril 2011) . - pp. 4741–4751[article] Gas - solid fluidization in mini- and micro-channels [texte imprimé] / Fei Wang, Auteur ; Liang-Shih Fan, Auteur . - 2011 . - pp. 4741–4751.
Chimie industrielle
Langues : Anglais (eng)
in Industrial & engineering chemistry research > Vol. 50 N° 8 (Avril 2011) . - pp. 4741–4751
Mots-clés : Gas solid fluidization Résumé : Much of the fundamental research reported in the literature on gas−solid fluidization properties has been performed with large gas−solid fluidized beds. However, little is known regarding gas−solid fluidization in the mini- and microscale channel sizes ranging from 10−3 to 10−2 m and 10−5 to 10−4 m, respectively. The wall effects in the mini- and microchannels significantly affect the hydrodynamics of gas−solid fluidization. Such effects are examined experimentally in this study using FCC particles in six mini- and microchannels with sizes ranging from 700 μm to 5 mm. The data reveal a significant increase in the minimum fluidization and bubbling velocities as well as the wall friction in the mini- and microchannels compared to those in large fluidized beds. Additionally, the maximum stable bubble size increases with the superficial gas velocity and channel size. The round-nosed slug and the wall slug are observed in the channels. Correlations for predicting the fluidization regime transition in large fluidized beds are not adequate for predicting that in the mini- and microchannels. Also, differing from fluidization in a large bed, there is regime transition instability in that particulate fluidization is observed to form in the 700 μm and 1 mm channels through the bubbling/slugging transition as the gas velocity increases beyond that for the fixed bed. DEWEY : 660 ISSN : 0888-5885 En ligne : http://pubs.acs.org/doi/abs/10.1021/ie102245m Exemplaires
Code-barres Cote Support Localisation Section Disponibilité aucun exemplaire Parasitic effects of grounding paths on common-mode EMI filter's performance in power electronics systems / Shuo, Wang in IEEE transactions on industrial electronics, Vol. 57 N° 9 (Septembre 2010)
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[article]
Titre : Parasitic effects of grounding paths on common-mode EMI filter's performance in power electronics systems Type de document : texte imprimé Auteurs : Shuo, Wang, Auteur ; Maillet, Yoann Yorrick, Auteur ; Fei Wang, Auteur Année de publication : 2011 Article en page(s) : pp. 3050 - 3059 Note générale : Génie électrique Langues : Anglais (eng) Mots-clés : Electromagnetic-interference (EMI) filter Grounding Inductive coupling Motor drive Mutual inductance Parasitic Index. décimale : 621.38 Dispositifs électroniques. Tubes à électrons. Photocellules. Accélérateurs de particules. Tubes à rayons X Résumé : High-frequency common-mode (CM) electromagnetic-interference (EMI) noise is difficult to suppress in electronics systems. EMI filters are used to suppress CM noise, but their performance is greatly affected by the parasitic effects of the grounding paths. In this paper, the parasitic effects of the grounding paths on an EMI filter's performance are investigated in a motor-drive system. The effects of the mutual inductance between two grounding paths are explored. Guidelines for the grounding of CM EMI filters are derived. Simulations and experiments are finally carried out to verify the theoretical analysis. DEWEY : 621.38 ISSN : 0278-0046 En ligne : http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5345721
in IEEE transactions on industrial electronics > Vol. 57 N° 9 (Septembre 2010) . - pp. 3050 - 3059[article] Parasitic effects of grounding paths on common-mode EMI filter's performance in power electronics systems [texte imprimé] / Shuo, Wang, Auteur ; Maillet, Yoann Yorrick, Auteur ; Fei Wang, Auteur . - 2011 . - pp. 3050 - 3059.
Génie électrique
Langues : Anglais (eng)
in IEEE transactions on industrial electronics > Vol. 57 N° 9 (Septembre 2010) . - pp. 3050 - 3059
Mots-clés : Electromagnetic-interference (EMI) filter Grounding Inductive coupling Motor drive Mutual inductance Parasitic Index. décimale : 621.38 Dispositifs électroniques. Tubes à électrons. Photocellules. Accélérateurs de particules. Tubes à rayons X Résumé : High-frequency common-mode (CM) electromagnetic-interference (EMI) noise is difficult to suppress in electronics systems. EMI filters are used to suppress CM noise, but their performance is greatly affected by the parasitic effects of the grounding paths. In this paper, the parasitic effects of the grounding paths on an EMI filter's performance are investigated in a motor-drive system. The effects of the mutual inductance between two grounding paths are explored. Guidelines for the grounding of CM EMI filters are derived. Simulations and experiments are finally carried out to verify the theoretical analysis. DEWEY : 621.38 ISSN : 0278-0046 En ligne : http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5345721 Exemplaires
Code-barres Cote Support Localisation Section Disponibilité aucun exemplaire Removal of perchlorate from aqueous solution using protonated cross-linked chitosan / Yanhua Xie in Chemical engineering journal, Vol. 156 N° 1 (Janvier 2010)
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PermalinkSoot optical properties in the terahertz spectra domain / Fei Wang in Journal of heat transfer, Vol. 134 N° 7 (Juillet 2012)
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