| Titre : | Degradation failure mode of transistors |
| Auteurs : | M. E. H. Louhibi, Auteur ; A. Z. Keller, Directeur de thèse |
| Type de document : | texte imprimé |
| Editeur : | Bradford : University of Bradford, 1985 |
| Format : | 174 f. / ill. / 30 cm. |
| Note générale : |
Mémoire de Master : Electrotechnique : Bradford, University of Bradford : 1985
Annexe f. 175 - 193. Bibliogr.: f. 194 - 195 |
| Langues : | Anglais |
| Index. décimale : | Ms01285 |
| Tags : | Semiconductor devices reliability Solid-state semuconductor |
| Résumé : |
Since their conception, solid-state semuconductor devices have always been regarded as having the potential of high reliability.
This expectation was not diminished by the fact that early devices were characterised by lower lifetimes since it was quickly recognised that the sources of the device failure were the result of the relatively primitive technology. Research and development in the field of solid-state devices has concerned itself with two important problems. On one hand we have device physics, whose aim is to understand in terms of basic physical concepts the mode of failure of the various devices. In this way, one seeks to optimise the high reliability technology in order to achieve the best performance from each device. The second aspect of this work is to establish a distribution which fits data and gives a very good result. The objective of this thesis is to identify and investigate various modes of degradation which impair the reliability of the semiconductor devices and fit the log-normal and exponential distributions to the available data, using the least square and maximum likelihood methods for the estimation of the parameters. |
Exemplaires (1)
| Cote | Support | Localisation | Section | Disponibilité | Spécialité | Etat_Exemplaire |
|---|---|---|---|---|---|---|
| Ms01285 | Papier | Bibliothèque centrale | Mémoire de Master | Disponible |
