| Titre : | Investigations of some defects in gaas and some transport properties of gaas/(AIGa) as heterojunctions |
| Auteurs : | Khaled Bousbahi, Auteur ; L. Eaves, Directeur de thèse |
| Type de document : | texte imprimé |
| Editeur : | Nottingham : [s.n.], 1985 |
| Format : | 92 f. / ill. / 30 cm |
| Note générale : |
PhD Thesis : Physics : University of Nottingham : 1986
Bibliogr. en fin de chapitre |
| Langues : | Anglais |
| Index. décimale : | D006885 |
| Tags : | Investigations Gas Transport properties |
| Résumé : |
The major part of this thesis describes experimental investigations of a deep level, labelled EL2 in GaAs.
The methods employed include high resolution optical absorption, photoluminescence and two dimensional infra-red (IR) imaging. The experiments were performed between room temperature and liquid helium temperature. The samples used were undoped and cr-doped semi-insulating (SI) GaAs grown by the liquid encapsulation czochralski technique. One chapter of this thesis is devoted to the investigation of the polaron effect in a two-dimensional electron gas (2DEG) as represented by the interface in the semi-conductor heterostructure (GaAl)As/GaAs. This heterostructure is grown by the molecular beam epitxy (MBE) technique on a SI GaAs substrate. The method used is the magnetophonon resonance effect derived from the measurements of the transverse magnetoresistance against a sweeping magnetic field up to a value of 20 tesla. The temperature range being 100K to 150K. |
Exemplaires (1)
| Cote | Support | Localisation | Section | Disponibilité | Spécialité | Etat_Exemplaire |
|---|---|---|---|---|---|---|
| D006885 | Papier | Bibliothèque Annexe | Thèse de Doctorat | Disponible | Autre | Consultation sur place |
