| Titre : | Charge-extraction technique for studying the surface-states in MOS devices | | Type de document : | texte imprimé | | Auteurs : | Bouderbala, Rachid, Auteur ; Ved Mitra, Directeur de thèse | | Editeur : | Institut National d'Electricité et d'Electronique INELEC | | Année de publication : | 1992 | | Importance : | 191 f. | | Présentation : | ill. | | Format : | 30 cm. | | Note générale : | Mémoire de Magister : Electronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992
Bibliogr. f. 192 - 198 | | Langues : | Anglais (eng) | | Mots-clés : | Charge pumping technique MOS devices ; Oxide properties ; Interface trapped charges | | Index. décimale : | M004192 | | Résumé : | The present thesis is devoted to give a comprehensive account of the charge pumping technique, scope and exploration of an alternative approach and accomplishment and development of a new technique called charge extraction technique for studying the interface properties of MOS devices.
The whole thesis is presented in the form of 8 chapters.
After introducing the subject in the present chapter, chapter 2 is devoted to the background study of the MOS structure itself covering all its essential features, characteristics and aspects which are relevant in the further development of the subject.
In chapter 3, the properties of the Si-SiO2 and, in particular, all those factors which contribute to the non-ideality of MOS structure are examined and their effect on the electrical characteristics are discussed.
We end this chapter by examining briefly the impact that the fabrication technology may have on the generation and/or on the reduction of these electrically active defects.
Chapter 4 is centred around the capacitance methods.
All those techniques, which are common in use such as the differentiation method, the integration method, the conductance method, and the DLTS technique, are presented in details whereas the others, which are more or less of historical interest only, are presented briefly.
Chapter 5 introduces the basic concepts needed to identify, understand, and analyse the phenomenon of charge pumping technique which is followed by a mathematical analysis and a few limitations of the technique.
A brief account of the other developments on charge pumping technique is also presented.
Chapter 6 covers the required instrumentation for the implementation and use of the charge pumping technique along with the details concerning the actual devices and the measuring set-up.
The experimental results of the charge pumping technique are presented and discussed.
Finally, the results obtained by the new technique are discussed and compared to those found by the charge pumping technique.
In chapter 7, a theory of the new technique, called charge-extraction technique for studying the interface traps in MOS devices, is presented.
Finally chapter 8 concludes with a discussion on the usefulness and future scope of the work presented in this thesis. |
Charge-extraction technique for studying the surface-states in MOS devices [texte imprimé] / Bouderbala, Rachid, Auteur ; Ved Mitra, Directeur de thèse . - [S.l.] : Institut National d'Electricité et d'Electronique INELEC, 1992 . - 191 f. : ill. ; 30 cm. Mémoire de Magister : Electronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992
Bibliogr. f. 192 - 198 Langues : Anglais ( eng) | Mots-clés : | Charge pumping technique MOS devices ; Oxide properties ; Interface trapped charges | | Index. décimale : | M004192 | | Résumé : | The present thesis is devoted to give a comprehensive account of the charge pumping technique, scope and exploration of an alternative approach and accomplishment and development of a new technique called charge extraction technique for studying the interface properties of MOS devices.
The whole thesis is presented in the form of 8 chapters.
After introducing the subject in the present chapter, chapter 2 is devoted to the background study of the MOS structure itself covering all its essential features, characteristics and aspects which are relevant in the further development of the subject.
In chapter 3, the properties of the Si-SiO2 and, in particular, all those factors which contribute to the non-ideality of MOS structure are examined and their effect on the electrical characteristics are discussed.
We end this chapter by examining briefly the impact that the fabrication technology may have on the generation and/or on the reduction of these electrically active defects.
Chapter 4 is centred around the capacitance methods.
All those techniques, which are common in use such as the differentiation method, the integration method, the conductance method, and the DLTS technique, are presented in details whereas the others, which are more or less of historical interest only, are presented briefly.
Chapter 5 introduces the basic concepts needed to identify, understand, and analyse the phenomenon of charge pumping technique which is followed by a mathematical analysis and a few limitations of the technique.
A brief account of the other developments on charge pumping technique is also presented.
Chapter 6 covers the required instrumentation for the implementation and use of the charge pumping technique along with the details concerning the actual devices and the measuring set-up.
The experimental results of the charge pumping technique are presented and discussed.
Finally, the results obtained by the new technique are discussed and compared to those found by the charge pumping technique.
In chapter 7, a theory of the new technique, called charge-extraction technique for studying the interface traps in MOS devices, is presented.
Finally chapter 8 concludes with a discussion on the usefulness and future scope of the work presented in this thesis. |
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