Enhanced wet - chemical etching to prepare patterned silicon mask with controlled depths by combining photolithography with galvanic reaction / Nannan Sun in Industrial & engineering chemistry research, Vol. 51 N° 2 (Janvier 2012)  

Public ISBD [article]  inIndustrial & engineering chemistry research > Vol. 51 N° 2 (Janvier 2012) . - pp. 788-794 Titre : Enhanced wet - chemical etching to prepare patterned silicon mask with controlled depths by combining photolithography with galvanic reaction Type de document : texte imprimé Auteurs : Nannan Sun, Auteur ; Jianming Chen, Auteur ; Chao Jiang, Auteur Année de publication : 2012 Article en page(s) : pp. 788-794 Note générale : Chimie industrielle Langues : Anglais (eng) Mots-clés : Chemical etching Résumé : We have developed an enhanced wet-chemical method to prepare patterned silicon templates with controlled depths at microscale by combining photolithography with electroless metal etching. The silicon masks are obtained in the following procedures: patterned silicon wafers selectively etch through galvanic reactions and result in patterned surfaces with silicon nanoarrays in exposed areas during photolithography; the as-etched silicon wafers are corroded in a mixture etching solution to remove silicon nanoarrays, leading to patterned silicon templates. DEWEY : 660 ISSN : 0888-5885 En ligne : http://cat.inist.fr/?aModele=afficheN&cpsidt=25476413 [article] Enhanced wet - chemical etching to prepare patterned silicon mask with controlled depths by combining photolithography with galvanic reaction [texte imprimé] / Nannan Sun, Auteur ; Jianming Chen, Auteur ; Chao Jiang, Auteur . - 2012 . - pp. 788-794. Chimie industrielle Langues : Anglais (eng) in Industrial & engineering chemistry research > Vol. 51 N° 2 (Janvier 2012) . - pp. 788-794 Mots-clés : Chemical etching Résumé : We have developed an enhanced wet-chemical method to prepare patterned silicon templates with controlled depths at microscale by combining photolithography with electroless metal etching. The silicon masks are obtained in the following procedures: patterned silicon wafers selectively etch through galvanic reactions and result in patterned surfaces with silicon nanoarrays in exposed areas during photolithography; the as-etched silicon wafers are corroded in a mixture etching solution to remove silicon nanoarrays, leading to patterned silicon templates. DEWEY : 660 ISSN : 0888-5885 En ligne : http://cat.inist.fr/?aModele=afficheN&cpsidt=25476413

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