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Auteur S. Van Elshocht
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[article]
in Acta materialia > Vol. 58 N° 1 (Janvier 2010) . - pp. 216–225
Titre : Strontium niobate high-k dielectrics : Film deposition and material properties Type de document : texte imprimé Auteurs : A. Hardy, Auteur ; S. Van Elshocht, Auteur ; C. Adelmann, Auteur Année de publication : 2010 Article en page(s) : pp. 216–225 Note générale : Métallurgie Langues : Anglais (eng) Mots-clés : Deposition Sol–gel Oxides Thin films Dielectric constant Résumé : Strontium niobate ultrathin films were processed by water-based chemical solution deposition, an approach that offers environmental benefits. SrNb2O6 and Sr2Nb2O7 show high-k values, which is important for applications such as alternative gate dielectrics. The study of ultrathin films (thickness <30 nm) is crucial, as this is the thickness range for the application envisaged, and as film properties depend strongly on the film thickness. SrNb2O6 had a lower crystallization temperature, less interfacial silicate, lower carbonate content, and higher roughness compared to Sr2Nb2O7. The k values of amorphous films were limited for both compositions (k = 12–14). Crystallization and complete removal of organics or carbonates were accomplished by high-temperature annealing, but increased the roughness and leakage current. For Sr2Nb2O7, interfacial silicates were formed as well. Intermediate calcination steps improved the surface smoothness and increased the k value of SrNb2O6 up to 30. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645409005953 [article] Strontium niobate high-k dielectrics : Film deposition and material properties [texte imprimé] / A. Hardy, Auteur ; S. Van Elshocht, Auteur ; C. Adelmann, Auteur . - 2010 . - pp. 216–225.
Métallurgie
Langues : Anglais (eng)
in Acta materialia > Vol. 58 N° 1 (Janvier 2010) . - pp. 216–225
Mots-clés : Deposition Sol–gel Oxides Thin films Dielectric constant Résumé : Strontium niobate ultrathin films were processed by water-based chemical solution deposition, an approach that offers environmental benefits. SrNb2O6 and Sr2Nb2O7 show high-k values, which is important for applications such as alternative gate dielectrics. The study of ultrathin films (thickness <30 nm) is crucial, as this is the thickness range for the application envisaged, and as film properties depend strongly on the film thickness. SrNb2O6 had a lower crystallization temperature, less interfacial silicate, lower carbonate content, and higher roughness compared to Sr2Nb2O7. The k values of amorphous films were limited for both compositions (k = 12–14). Crystallization and complete removal of organics or carbonates were accomplished by high-temperature annealing, but increased the roughness and leakage current. For Sr2Nb2O7, interfacial silicates were formed as well. Intermediate calcination steps improved the surface smoothness and increased the k value of SrNb2O6 up to 30. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645409005953