Dislocation cross-slip in heteroepitaxial multilayer films / S.S. Quek in Acta materialia, Vol. 58 N° 1 (Janvier 2010)  

Public ISBD [article]  inActa materialia > Vol. 58 N° 1 (Janvier 2010) . - pp. 226–234 Titre : Dislocation cross-slip in heteroepitaxial multilayer films Type de document : texte imprimé Auteurs : S.S. Quek, Auteur ; Y.W. Zhang, Auteur Année de publication : 2010 Article en page(s) : pp. 226–234 Note générale : Métallurgie Langues : Anglais (eng) Mots-clés : Dislocation dynamics Thin film Heteroepitaxy Multilayers Cross-slip Résumé : We simulated dislocation dynamics in heteroepitaxial multilayer thin film systems, considering the case where threading dislocations emerging from the substrate replicate themselves into the thin film during the film growth process. In the regime where the thin film layer thickness is tens of nanometers, the strain hardening mechanism involves the glide of single threading dislocation segments in the thin film instead of by dislocation pile-ups. We studied the dislocations’ evolution behavior and their interactions since these then became significant to the strain hardening of the multilayer structure. Cross-slip of threading dislocation segments in multilayer structure was found to be more prevalent compared to a single-layered thin film. This can result in a more complex pattern of interfacial dislocations and may have a significant contribution to the interactions between threading and interfacial dislocations. The simulation was carried out using the level set method incorporating thin film growth. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645409005965 [article] Dislocation cross-slip in heteroepitaxial multilayer films [texte imprimé] / S.S. Quek, Auteur ; Y.W. Zhang, Auteur . - 2010 . - pp. 226–234. Métallurgie Langues : Anglais (eng) in Acta materialia > Vol. 58 N° 1 (Janvier 2010) . - pp. 226–234 Mots-clés : Dislocation dynamics Thin film Heteroepitaxy Multilayers Cross-slip Résumé : We simulated dislocation dynamics in heteroepitaxial multilayer thin film systems, considering the case where threading dislocations emerging from the substrate replicate themselves into the thin film during the film growth process. In the regime where the thin film layer thickness is tens of nanometers, the strain hardening mechanism involves the glide of single threading dislocation segments in the thin film instead of by dislocation pile-ups. We studied the dislocations’ evolution behavior and their interactions since these then became significant to the strain hardening of the multilayer structure. Cross-slip of threading dislocation segments in multilayer structure was found to be more prevalent compared to a single-layered thin film. This can result in a more complex pattern of interfacial dislocations and may have a significant contribution to the interactions between threading and interfacial dislocations. The simulation was carried out using the level set method incorporating thin film growth. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645409005965

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