Plasticity of indium antimonide between −176 and 400 °C under hydrostatic pressure / B. Kedjar in Acta materialia, Vol. 58 N° 4 (Fevrier 2010)  

Public ISBD [article]  inActa materialia > Vol. 58 N° 4 (Fevrier 2010) . - pp. 1418–1425 Titre : Plasticity of indium antimonide between −176 and 400 °C under hydrostatic pressure : Part I: Macroscopic aspects of the deformation Type de document : texte imprimé Auteurs : B. Kedjar, Auteur ; L. Thilly, Auteur ; J.-L. Demenet, Auteur Année de publication : 2011 Article en page(s) : pp. 1418–1425 Note générale : Métallurgie Langues : Anglais (eng) Mots-clés : Semiconductor Indium antimonide Brittle-to-ductile transition Compression Indentation Résumé : Indium antimonide (InSb) single crystals have been plastically deformed between −176 and 400 °C, i.e. below and above the brittle-to-ductile transition temperature situated around 150–160 °C, via the use of microindentation below room temperature (RT) and the Paterson press (compression under gaseous pressure) above RT. The evolution of the macroscopic mechanical data (hardness and critical resolved shear stress) with temperature suggests the existence of three deformation regimes with transitions at Ttr1 = 150 °C and Ttr2 = 20 °C. Ttr1 coincides with the brittle-to-ductile temperature, while Ttr2 may coincide with a transition in the nature of dislocations with dislocations propagating in the glide set above Ttr2 while moving in the shuffle set below Ttr2. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645409007538 [article] Plasticity of indium antimonide between −176 and 400 °C under hydrostatic pressure : Part I: Macroscopic aspects of the deformation [texte imprimé] / B. Kedjar, Auteur ; L. Thilly, Auteur ; J.-L. Demenet, Auteur . - 2011 . - pp. 1418–1425. Métallurgie Langues : Anglais (eng) in Acta materialia > Vol. 58 N° 4 (Fevrier 2010) . - pp. 1418–1425 Mots-clés : Semiconductor Indium antimonide Brittle-to-ductile transition Compression Indentation Résumé : Indium antimonide (InSb) single crystals have been plastically deformed between −176 and 400 °C, i.e. below and above the brittle-to-ductile transition temperature situated around 150–160 °C, via the use of microindentation below room temperature (RT) and the Paterson press (compression under gaseous pressure) above RT. The evolution of the macroscopic mechanical data (hardness and critical resolved shear stress) with temperature suggests the existence of three deformation regimes with transitions at Ttr1 = 150 °C and Ttr2 = 20 °C. Ttr1 coincides with the brittle-to-ductile temperature, while Ttr2 may coincide with a transition in the nature of dislocations with dislocations propagating in the glide set above Ttr2 while moving in the shuffle set below Ttr2. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645409007538

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Plasticity of indium antimonide between −176 °C and 400 °C under hydrostatic pressure / B. Kedjar in Acta materialia, Vol. 58 N° 4 (Fevrier 2010)  

Public ISBD [article]  inActa materialia > Vol. 58 N° 4 (Fevrier 2010) . - pp. 1426–1440 Titre : Plasticity of indium antimonide between −176 °C and 400 °C under hydrostatic pressure : Part II: Microscopic aspects of the deformation Type de document : texte imprimé Auteurs : B. Kedjar, Auteur ; L. Thilly, Auteur ; J.-L. Demenet, Auteur Année de publication : 2011 Article en page(s) : pp. 1426–1440 Note générale : Métallurgie Langues : Anglais (eng) Mots-clés : Semiconductor Indium antimonide Brittle-to-ductile transition Transmission electron microscopy Dislocations Résumé : Indium antimonide (InSb) has been plastically deformed over a wide temperature range, from 400 down to −176 °C (see the companion paper: Kedjar B, Thilly L, Demenet JL, Rabier J. Acta Mater 2009) and transmission electron microscopy was used to characterize the deformation microstructures. In the ductile regime, i.e. T > Ttr1 ≈ 150 °C, the crystal deforms via the nucleation and motion of perfect dislocations belonging to the glide set. In the brittle domain, i.e. for T < Ttr1 ≈ 150 °C, two regimes are observed: for Ttr2 ≈ 20 °C < T < Ttr1 ≈ 150 °C, the crystal deformation takes place via the nucleation and glide of dissociated perfect dislocations or only leading partials, while for T < Ttr2 ≈ 20 °C, the crystal deformation proceeds via the nucleation and motion of perfect dislocations belonging to the shuffle set. In view of these observations, the brittle-to-ductile transition (at Ttr1) is confirmed to correspond to a change in the dislocation nature in the glide set, from partial-mediated plasticity at low temperature to perfect-mediated plasticity at high temperature. Another transition is observed at Ttr2 and corresponds to the glide-to-shuffle transition which is observed experimentally for the first time in a III–V compound semiconductor. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645409007551 [article] Plasticity of indium antimonide between −176 °C and 400 °C under hydrostatic pressure : Part II: Microscopic aspects of the deformation [texte imprimé] / B. Kedjar, Auteur ; L. Thilly, Auteur ; J.-L. Demenet, Auteur . - 2011 . - pp. 1426–1440. Métallurgie Langues : Anglais (eng) in Acta materialia > Vol. 58 N° 4 (Fevrier 2010) . - pp. 1426–1440 Mots-clés : Semiconductor Indium antimonide Brittle-to-ductile transition Transmission electron microscopy Dislocations Résumé : Indium antimonide (InSb) has been plastically deformed over a wide temperature range, from 400 down to −176 °C (see the companion paper: Kedjar B, Thilly L, Demenet JL, Rabier J. Acta Mater 2009) and transmission electron microscopy was used to characterize the deformation microstructures. In the ductile regime, i.e. T > Ttr1 ≈ 150 °C, the crystal deforms via the nucleation and motion of perfect dislocations belonging to the glide set. In the brittle domain, i.e. for T < Ttr1 ≈ 150 °C, two regimes are observed: for Ttr2 ≈ 20 °C < T < Ttr1 ≈ 150 °C, the crystal deformation takes place via the nucleation and glide of dissociated perfect dislocations or only leading partials, while for T < Ttr2 ≈ 20 °C, the crystal deformation proceeds via the nucleation and motion of perfect dislocations belonging to the shuffle set. In view of these observations, the brittle-to-ductile transition (at Ttr1) is confirmed to correspond to a change in the dislocation nature in the glide set, from partial-mediated plasticity at low temperature to perfect-mediated plasticity at high temperature. Another transition is observed at Ttr2 and corresponds to the glide-to-shuffle transition which is observed experimentally for the first time in a III–V compound semiconductor. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645409007551

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