Formation mechanisms of cyclic saturation dislocation patterns in [0 0 1], [0 1 1] and View the MathML source copper single crystals / P. Li in Acta materialia, Vol. 58 N° 9 (Mai 2010)  

Public ISBD [article]  inActa materialia > Vol. 58 N° 9 (Mai 2010) . - pp. 3281–3294 Titre : Formation mechanisms of cyclic saturation dislocation patterns in [0 0 1], [0 1 1] and View the MathML source copper single crystals Type de document : texte imprimé Auteurs : P. Li, Auteur ; S.X. Li, Auteur ; Z.G. Wang, Auteur Année de publication : 2011 Article en page(s) : pp. 3281–3294 Note générale : Métallurgie Langues : Anglais (eng) Mots-clés : Orientation effect Cyclic deformation Copper single crystals Dislocation patterns Résumé : This work reveals the formation mechanisms of saturation dislocation patterns in three typical multiple-slip oriented [0 0 1], [0 1 1] and View the MathML source copper single crystals. Compared with the single-slip oriented copper single crystals, the three multiple-slip oriented ones show very different dislocation patterns. It was found that the dislocation patterns in cyclically saturated copper single crystals are the Labyrinth structure for [0 0 1], wall structure for [0 1 1] and cell structure for View the MathML source, respectively. Based on a two-phase structure consisting of persistent slip bands and veins for single-slip orientation, the formation mechanisms of the dislocation patterns in multiple-slip oriented crystals are proposed as follows: the formation of the complex dislocation patterns depends on the activating slip system. The easy operation of the critical secondary slip system will contribute to the formation of the Labyrinth structure. The activation of the coplanar secondary slip system will be beneficial to formation of the cell structure. If no secondary slip system is activated, the wall structure is more prone to appear. Finally, the intrinsic relationship between various dislocation patterns and face centered cubic crystal structure was established. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645410000881 [article] Formation mechanisms of cyclic saturation dislocation patterns in [0 0 1], [0 1 1] and View the MathML source copper single crystals [texte imprimé] / P. Li, Auteur ; S.X. Li, Auteur ; Z.G. Wang, Auteur . - 2011 . - pp. 3281–3294. Métallurgie Langues : Anglais (eng) in Acta materialia > Vol. 58 N° 9 (Mai 2010) . - pp. 3281–3294 Mots-clés : Orientation effect Cyclic deformation Copper single crystals Dislocation patterns Résumé : This work reveals the formation mechanisms of saturation dislocation patterns in three typical multiple-slip oriented [0 0 1], [0 1 1] and View the MathML source copper single crystals. Compared with the single-slip oriented copper single crystals, the three multiple-slip oriented ones show very different dislocation patterns. It was found that the dislocation patterns in cyclically saturated copper single crystals are the Labyrinth structure for [0 0 1], wall structure for [0 1 1] and cell structure for View the MathML source, respectively. Based on a two-phase structure consisting of persistent slip bands and veins for single-slip orientation, the formation mechanisms of the dislocation patterns in multiple-slip oriented crystals are proposed as follows: the formation of the complex dislocation patterns depends on the activating slip system. The easy operation of the critical secondary slip system will contribute to the formation of the Labyrinth structure. The activation of the coplanar secondary slip system will be beneficial to formation of the cell structure. If no secondary slip system is activated, the wall structure is more prone to appear. Finally, the intrinsic relationship between various dislocation patterns and face centered cubic crystal structure was established. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645410000881

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Tensile and compressive mechanical behavior of twinned silicon carbide nanowires / Z.G. Wang in Acta materialia, Vol. 58 N° 6 (Avril 2010)  

Public ISBD [article]  inActa materialia > Vol. 58 N° 6 (Avril 2010) . - pp. 1963–1971 Titre : Tensile and compressive mechanical behavior of twinned silicon carbide nanowires Type de document : texte imprimé Auteurs : Z.G. Wang, Auteur ; J.B. Li, Auteur ; F. Gao, Auteur Année de publication : 2011 Article en page(s) : pp. 1963–1971 Note générale : Métallurgie Langues : Anglais (eng) Mots-clés : Twinning Nanotructures Fracture Buckling Molecular dynamics Résumé : Molecular dynamics simulations with the Tersoff potential were used to study the response of twinned SiC nanowires under tensile and compressive strain. The critical strain of the twinned nanowires can be enhanced by twin stacking faults, and their critical strains are larger than those of perfect nanowires with the same diameters. Under axial tensile strain, the bonds of the nanowires are stretched just before failure. The failure behavior is found to depend on the twin segment thickness and the diameter of the nanowires. An atomic chain is observed for thin nanowires with small twin segment thickness under tension strain. Under axial compressive strain, the collapse of twinned SiC nanowires exhibits two different failure modes, depending on the length and diameter of the nanowires, i.e., shell buckling for short nanowires and columnar buckling for longer nanowires. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645409008180 [article] Tensile and compressive mechanical behavior of twinned silicon carbide nanowires [texte imprimé] / Z.G. Wang, Auteur ; J.B. Li, Auteur ; F. Gao, Auteur . - 2011 . - pp. 1963–1971. Métallurgie Langues : Anglais (eng) in Acta materialia > Vol. 58 N° 6 (Avril 2010) . - pp. 1963–1971 Mots-clés : Twinning Nanotructures Fracture Buckling Molecular dynamics Résumé : Molecular dynamics simulations with the Tersoff potential were used to study the response of twinned SiC nanowires under tensile and compressive strain. The critical strain of the twinned nanowires can be enhanced by twin stacking faults, and their critical strains are larger than those of perfect nanowires with the same diameters. Under axial tensile strain, the bonds of the nanowires are stretched just before failure. The failure behavior is found to depend on the twin segment thickness and the diameter of the nanowires. An atomic chain is observed for thin nanowires with small twin segment thickness under tension strain. Under axial compressive strain, the collapse of twinned SiC nanowires exhibits two different failure modes, depending on the length and diameter of the nanowires, i.e., shell buckling for short nanowires and columnar buckling for longer nanowires. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645409008180

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