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Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H–SiC(0001) substrates

Z.J. Reitmeier, Auteur ; S. Einfeldt, Auteur ; R.F. Davis, Auteur |

Dans Acta materialia (Vol. 58 N° 6, Avril 2010)

Hydrogen-etching of 6H–SiC(0001) substrates removed mechanical polishing damage and produced an array of parallel, unit cell high steps. The initial stage of AlN deposition on these etched substrates occurred via island nucleation, both on step [...]

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