Article : texte imprimé

Domain switching and creep behavior of a poled PZT wafer under through-thickness electric fields at high temperatures

Sang-Joo Kim, Auteur ; Ju Hong Kim, Auteur ; Chang-Hoan Lee, Auteur |

Dans Acta materialia (Vol. 58 N° 6, Avril 2010)

Various constant magnitudes of through-thickness electric field are applied to a poled PZT wafer for about 1800 s at four different high temperatures. The wafer is then removed swiftly from the field and kept at zero electric field for about 100[...]

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