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Broadband anti-reflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature / Neng Wan in Acta materialia, Vol. 58 N° 8 (Mai 2010) 

Public ISBD [article]  in Acta materialia > Vol. 58 N° 8 (Mai 2010) . - pp. 3068–3072 Titre : Broadband anti-reflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature Type de document : texte imprimé Auteurs : Neng Wan, Auteur ; Jun Xu, Auteur ; Guran Chen, Auteur Année de publication : 2011 Article en page(s) : pp. 3068–3072 Note générale : Métallurgie Langues : Anglais (eng) Mots-clés : ITO  Nanostructure  e-Beam  evaporation  Field  emission  Anti-reflection Résumé : Small-sized indium tin oxide (ITO) nanowires were fabricated using the electron beam evaporation (EBE) technique at low temperature (∼150 °C) without adding any catalyst. The ITO nanowires have a typical diameter of around 10 nm and a length of more than 100 nm, with body-centered cubic crystal structures that grow along the 〈1 0 0〉 directions, as revealed by transmission electron microscopy. The growth mechanism of the branched ITO nanowires was found to be a vapor–solid process. The nanowire films show a broadband anti-reflection property due to the graded refraction index from the film surface to the substrate. Enhanced field emission properties with a low turn-on electric field and a high field enhancement factor were also observed in the ITO nanowires. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645410000558 [article] Broadband anti-reflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature [texte imprimé] / Neng Wan, Auteur ; Jun Xu, Auteur ; Guran Chen, Auteur . - 2011 . - pp. 3068–3072. Métallurgie Langues : Anglais (eng) in Acta materialia > Vol. 58 N° 8 (Mai 2010) . - pp. 3068–3072 Mots-clés : ITO  Nanostructure  e-Beam  evaporation  Field  emission  Anti-reflection Résumé : Small-sized indium tin oxide (ITO) nanowires were fabricated using the electron beam evaporation (EBE) technique at low temperature (∼150 °C) without adding any catalyst. The ITO nanowires have a typical diameter of around 10 nm and a length of more than 100 nm, with body-centered cubic crystal structures that grow along the 〈1 0 0〉 directions, as revealed by transmission electron microscopy. The growth mechanism of the branched ITO nanowires was found to be a vapor–solid process. The nanowire films show a broadband anti-reflection property due to the graded refraction index from the film surface to the substrate. Enhanced field emission properties with a low turn-on electric field and a high field enhancement factor were also observed in the ITO nanowires. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645410000558