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Analysis by high-resolution electron microscopy of elastic strain in thick InAs layers embedded in Ga0.47In0.53As buffers on InP(0 0 1) substrate

C. Gatel, Auteur ; H. Tang, Auteur ; C. Crestou, Auteur |

Dans Acta materialia (Vol. 58 N° 9, Mai 2010)

Elastic strain has been investigated by transmission electron microscopy in nanometric InAs layers grown on Ga0.47In0.53As/InP(0 0 1) by molecular beam epitaxy using a residual Sb flux. Deposits of 10 and 15 monolayers of InAs (3 and 4.5 nm) rem[...]

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