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Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN / J.M. Mánuel in Acta materialia, Vol. 58 N° 12 (Juillet 2010) 

Public ISBD [article]  in Acta materialia > Vol. 58 N° 12 (Juillet 2010) . - pp. 4120–4125 Titre : Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN Type de document : texte imprimé Auteurs : J.M. Mánuel, Auteur ; F.M. Morales, Auteur ; J.G. Lozano, Auteur Année de publication : 2011 Article en page(s) : pp. 4120–4125 Note générale : Métallurgie Langues : Anglais (eng) Mots-clés : Compound  semiconductor  (InAlN)  Lattice-matched  Elastic  behavior  Transmission  electron  microscopy  (TEM)  Secondary  ion  mass  spectroscopy  (SIMS) Résumé : A group of InAlN films was fabricated by molecular beam epitaxy and investigated by X-ray diffraction, transmission electron microscopy and element nano-analyses. All top InxAl1−xN layers have compositions around lateral lattice-matching to GaN (x ≈ 0.18) and are pseudomorphic. For a growth rate of 350 nm h−1, each InAlN film separated into two sublayers with different In/Al-ratios. Micrographs reveal sharp transitions both at the InAlN/GaN and at the InAlN/InAlN interfaces. In contrast to these separated layers, an optimized epitaxy using an AlN interlayer and a lower growth rate, 100 nm h−1, enabled the fabrication of a single-phase InxAl1−xN layer on GaN, homogeneous on a nanoscopic scale. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645410002077 [article] Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN [texte imprimé] / J.M. Mánuel, Auteur ; F.M. Morales, Auteur ; J.G. Lozano, Auteur . - 2011 . - pp. 4120–4125. Métallurgie Langues : Anglais (eng) in Acta materialia > Vol. 58 N° 12 (Juillet 2010) . - pp. 4120–4125 Mots-clés : Compound  semiconductor  (InAlN)  Lattice-matched  Elastic  behavior  Transmission  electron  microscopy  (TEM)  Secondary  ion  mass  spectroscopy  (SIMS) Résumé : A group of InAlN films was fabricated by molecular beam epitaxy and investigated by X-ray diffraction, transmission electron microscopy and element nano-analyses. All top InxAl1−xN layers have compositions around lateral lattice-matching to GaN (x ≈ 0.18) and are pseudomorphic. For a growth rate of 350 nm h−1, each InAlN film separated into two sublayers with different In/Al-ratios. Micrographs reveal sharp transitions both at the InAlN/GaN and at the InAlN/InAlN interfaces. In contrast to these separated layers, an optimized epitaxy using an AlN interlayer and a lower growth rate, 100 nm h−1, enabled the fabrication of a single-phase InxAl1−xN layer on GaN, homogeneous on a nanoscopic scale. DEWEY : 669 ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645410002077