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Tunnel junction based memories / Anes Bouchenak Khelladi 

Public ISBD Titre : Tunnel junction based memories Type de document : texte imprimé Auteurs : Anes Bouchenak Khelladi, Auteur ; Haddadi, Mourad, Directeur de thèse Editeur : [S.l.] : [s.n.] Année de publication : 2012 Importance : 57 f. Présentation : ill. Format : 30 cm. Accompagnement : 1 CD-ROM. Note générale : Mémoire de Projet de Fin d'Etudes: Electronique: Alger, Ecole Nationale Polytechnique: 2012 Annexes f. 58 - 71 . - Bibliogr. f. 72 Langues : Anglais (eng) Mots-clés : Non-volatile  memories RAMs  Tunnel  junctions Spintronics Ferromagnetic Ferroelectric Index. décimale : PN00412 Résumé : Computers and other types of systems require the permanent or semi-permanent storage of large amounts of binary data and Memory is the portion of these systems which do it and in large quantities. The quest for a non-volatile memory technology that offers high storage density, high read and writes speeds, and low power consumption has triggered intense research into new materials, mechanisms and device architectures. The successful memory technologies emerging from these efforts have been the atomic switch, the resistive RAM and the magnetic tunnel junction. Researchers in this domain report a substantial advance in an alternative approach to non-volatile memory technology based on ferroelectric tunnel junctions achieving very low write powers, in a highly reproducible manner. Tunnel junction based memories [texte imprimé] / Anes Bouchenak Khelladi, Auteur ; Haddadi, Mourad, Directeur de thèse . - [S.l.] : [s.n.], 2012 . - 57 f. : ill. ; 30 cm. + 1 CD-ROM. Mémoire de Projet de Fin d'Etudes: Electronique: Alger, Ecole Nationale Polytechnique: 2012 Annexes f. 58 - 71 . - Bibliogr. f. 72 Langues : Anglais (eng) Mots-clés : Non-volatile  memories RAMs  Tunnel  junctions Spintronics Ferromagnetic Ferroelectric Index. décimale : PN00412 Résumé : Computers and other types of systems require the permanent or semi-permanent storage of large amounts of binary data and Memory is the portion of these systems which do it and in large quantities. The quest for a non-volatile memory technology that offers high storage density, high read and writes speeds, and low power consumption has triggered intense research into new materials, mechanisms and device architectures. The successful memory technologies emerging from these efforts have been the atomic switch, the resistive RAM and the magnetic tunnel junction. Researchers in this domain report a substantial advance in an alternative approach to non-volatile memory technology based on ferroelectric tunnel junctions achieving very low write powers, in a highly reproducible manner.

Exemplaires

Code-barres	Cote	Support	Localisation	Section	Disponibilité	Spécialité	Etat_Exemplaire
PN00412	PN00412	Papier + ressource électronique	Bibliothèque centrale	Projet Fin d'Etudes	Disponible	Electronique	Consultation sur place/Téléchargeable

Documents numériques

BOUCHENAK KHELLADI.Anes.pdf URL