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Unexpected slip mechanism induced by the reduced dimensions in silicon nanostructures / Julien Guénolé in Acta materialia, Vol. 59 N° 20 (Décembre 2011) 

Public ISBD [article]  in Acta materialia > Vol. 59 N° 20 (Décembre 2011) . - pp. 7464–7472 Titre : Unexpected slip mechanism induced by the reduced dimensions in silicon nanostructures : Atomistic study Type de document : texte imprimé Auteurs : Julien Guénolé, Auteur ; Sandrine Brochard, Auteur ; Julien Godet, Auteur Année de publication : 2012 Article en page(s) : pp. 7464–7472 Note générale : Métallurgie Langues : Anglais (eng) Mots-clés : Dislocation  Semiconductors  Plastic  deformation  Simulation Résumé : We have performed molecular dynamics simulations and first-principles calculations to investigate the first stages of plasticity in single-crystalline silicon nanostructures free of initial defects, under compressive and tensile strain along the [0 0 1] axis. In compression especially, we observe the activation of {0 1 1} planes, both in nanowires and in thin films, regardless of the temperature and the interatomic potential used. The occurrence of such an unexpected slip system can be explained by a careful investigation of the generalized stacking fault energy under different stress conditions, and the associated restoring forces. Finally, the activation of the {0 1 1} planes is shown to be an indirect consequence of the small dimensions of the nanostructures considered. ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645411006161 [article] Unexpected slip mechanism induced by the reduced dimensions in silicon nanostructures : Atomistic study [texte imprimé] / Julien Guénolé, Auteur ; Sandrine Brochard, Auteur ; Julien Godet, Auteur . - 2012 . - pp. 7464–7472. Métallurgie Langues : Anglais (eng) in Acta materialia > Vol. 59 N° 20 (Décembre 2011) . - pp. 7464–7472 Mots-clés : Dislocation  Semiconductors  Plastic  deformation  Simulation Résumé : We have performed molecular dynamics simulations and first-principles calculations to investigate the first stages of plasticity in single-crystalline silicon nanostructures free of initial defects, under compressive and tensile strain along the [0 0 1] axis. In compression especially, we observe the activation of {0 1 1} planes, both in nanowires and in thin films, regardless of the temperature and the interatomic potential used. The occurrence of such an unexpected slip system can be explained by a careful investigation of the generalized stacking fault energy under different stress conditions, and the associated restoring forces. Finally, the activation of the {0 1 1} planes is shown to be an indirect consequence of the small dimensions of the nanostructures considered. ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645411006161