Self-organized growth of higher manganese silicide nanowires on Si(1 1 1), (1 1 0) and (0 0 1) surfaces / Zhi-Qiang Zou in Acta materialia, Vol. 59 N° 20 (Décembre 2011)  

Public ISBD [article]  inActa materialia > Vol. 59 N° 20 (Décembre 2011) . - pp. 7473–7479 Titre : Self-organized growth of higher manganese silicide nanowires on Si(1 1 1), (1 1 0) and (0 0 1) surfaces Type de document : texte imprimé Auteurs : Zhi-Qiang Zou, Auteur ; Wei-Cong Li, Auteur ; Jia-Miao Liang, Auteur Année de publication : 2012 Article en page(s) : pp. 7473–7479 Note générale : Métallurgie Langues : Anglais (eng) Mots-clés : Crystal growth Molecular beam epitaxy (MBE) Scanning tunneling spectroscopy Transmission electron microscopy (TEM) Transition metal silicides Résumé : Higher manganese silicide nanowires (NWs) with a large aspect ratio have been grown on three kinds of substrate, Si(1 1 1), (1 1 0) and (0 0 1), with the reactive epitaxy method at temperatures above ∼500 °C. The self-assembly of the NWs is confined along the Si〈1 1 0〉 directions, resulting in the NWs orienting with the long axis along one, two and three particular directions on the Si(1 1 0), (0 0 1) and (1 1 1) surfaces, respectively. Scanning tunneling spectroscopy and transmission electron microscopy (TEM) studies indicate unambiguously that the NWs are tetragonal MnSi1.7. The width of the NWs has a maximum or well-defined value on each kind of substrate, though the length varies greatly. In the plan-view TEM micrographs, the NWs exhibit two sets of Moiré fringes: one is along the length direction and has a large periodicity, and the other is along the width direction and has a very small periodicity. These phenomena strongly indicate that the growth of NWs is governed by a strain-driven energetic mechanism and the NW shape results from anisotropic lattice mismatch between the silicide and the Si substrate. This research paves the way towards controllable growth of the silicide NWs on silicon substrates, which may help to advance the realization of practical applications of silicide NWs in nanoelectronics. ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645411006276 [article] Self-organized growth of higher manganese silicide nanowires on Si(1 1 1), (1 1 0) and (0 0 1) surfaces [texte imprimé] / Zhi-Qiang Zou, Auteur ; Wei-Cong Li, Auteur ; Jia-Miao Liang, Auteur . - 2012 . - pp. 7473–7479. Métallurgie Langues : Anglais (eng) in Acta materialia > Vol. 59 N° 20 (Décembre 2011) . - pp. 7473–7479 Mots-clés : Crystal growth Molecular beam epitaxy (MBE) Scanning tunneling spectroscopy Transmission electron microscopy (TEM) Transition metal silicides Résumé : Higher manganese silicide nanowires (NWs) with a large aspect ratio have been grown on three kinds of substrate, Si(1 1 1), (1 1 0) and (0 0 1), with the reactive epitaxy method at temperatures above ∼500 °C. The self-assembly of the NWs is confined along the Si〈1 1 0〉 directions, resulting in the NWs orienting with the long axis along one, two and three particular directions on the Si(1 1 0), (0 0 1) and (1 1 1) surfaces, respectively. Scanning tunneling spectroscopy and transmission electron microscopy (TEM) studies indicate unambiguously that the NWs are tetragonal MnSi1.7. The width of the NWs has a maximum or well-defined value on each kind of substrate, though the length varies greatly. In the plan-view TEM micrographs, the NWs exhibit two sets of Moiré fringes: one is along the length direction and has a large periodicity, and the other is along the width direction and has a very small periodicity. These phenomena strongly indicate that the growth of NWs is governed by a strain-driven energetic mechanism and the NW shape results from anisotropic lattice mismatch between the silicide and the Si substrate. This research paves the way towards controllable growth of the silicide NWs on silicon substrates, which may help to advance the realization of practical applications of silicide NWs in nanoelectronics. ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645411006276

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