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Synthesis of fluorine doped zinc oxide by reactive magnetron sputtering / X. Noirfalise in Acta materialia, Vol. 59 N° 20 (Décembre 2011) 

Public ISBD [article]  in Acta materialia > Vol. 59 N° 20 (Décembre 2011) . - pp. 7521–7529 Titre : Synthesis of fluorine doped zinc oxide by reactive magnetron sputtering Type de document : texte imprimé Auteurs : X. Noirfalise, Auteur ; T. Godfroid, Auteur ; G. Guisbiers, Auteur Année de publication : 2012 Article en page(s) : pp. 7521–7529 Note générale : Métallurgie Langues : Anglais (eng) Mots-clés : Zinc  oxide  Thin  film  coating  Electrical  properties  Physical  vapour  deposition  Transparent  conductive  oxide Résumé : ZnO and fluorine doped ZnO (FZO) thin films were prepared by d.c. reactive magnetron sputtering using a zinc target in an Ar/O2(/F2) mixture. In a first attempt ZnO films were synthesized in order to optimize the matrix properties in terms of crystalline properties and transparency. The parameters studied were the d.c. power (Pdc), the total pressure (PTot) and the O2 content in the discharge (%O2). The highest grain size of ∼25 nm is obtained for Pdc = 70 W, PTot = 30 mtorr and %O2 = 7.5%. F2 was then introduced in the discharge. The influence of the presence of fluorine on the crystallographic, chemical, electrical and optical properties of the deposited films were evaluated. Our X-ray photoelectron spectroscopy and X-ray diffraction (XRD) data suggest that only a certain part of the measured fluorine atoms substitute for oxygen atoms in the ZnO structure. The rest of fluorine could be adsorbed as F2 on the grain boundaries or located in interstices of the ZnO structure. XRD data reveal a decrease in the crystallite size with an increase in the fluorine content. Above a fluorine concentration of ∼2% the FZO films become amorphous. The electrical properties have been investigated by Hall effect measurements. The optimal synthesis conditions (∼2% of fluorine in the film) were a charge carrier density of ∼1020 cm−3, an electrical resistivity of 10−2 Ω cm, and a charge mobility of 4 cm2 V s−1. Finally, all deposited FZO films had >80% transmission in the visible range. ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645411005544 [article] Synthesis of fluorine doped zinc oxide by reactive magnetron sputtering [texte imprimé] / X. Noirfalise, Auteur ; T. Godfroid, Auteur ; G. Guisbiers, Auteur . - 2012 . - pp. 7521–7529. Métallurgie Langues : Anglais (eng) in Acta materialia > Vol. 59 N° 20 (Décembre 2011) . - pp. 7521–7529 Mots-clés : Zinc  oxide  Thin  film  coating  Electrical  properties  Physical  vapour  deposition  Transparent  conductive  oxide Résumé : ZnO and fluorine doped ZnO (FZO) thin films were prepared by d.c. reactive magnetron sputtering using a zinc target in an Ar/O2(/F2) mixture. In a first attempt ZnO films were synthesized in order to optimize the matrix properties in terms of crystalline properties and transparency. The parameters studied were the d.c. power (Pdc), the total pressure (PTot) and the O2 content in the discharge (%O2). The highest grain size of ∼25 nm is obtained for Pdc = 70 W, PTot = 30 mtorr and %O2 = 7.5%. F2 was then introduced in the discharge. The influence of the presence of fluorine on the crystallographic, chemical, electrical and optical properties of the deposited films were evaluated. Our X-ray photoelectron spectroscopy and X-ray diffraction (XRD) data suggest that only a certain part of the measured fluorine atoms substitute for oxygen atoms in the ZnO structure. The rest of fluorine could be adsorbed as F2 on the grain boundaries or located in interstices of the ZnO structure. XRD data reveal a decrease in the crystallite size with an increase in the fluorine content. Above a fluorine concentration of ∼2% the FZO films become amorphous. The electrical properties have been investigated by Hall effect measurements. The optimal synthesis conditions (∼2% of fluorine in the film) were a charge carrier density of ∼1020 cm−3, an electrical resistivity of 10−2 Ω cm, and a charge mobility of 4 cm2 V s−1. Finally, all deposited FZO films had >80% transmission in the visible range. ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S1359645411005544