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Growth of dislocation clusters during directional solidification of multicrystalline silicon ingots / B. Ryningen in Acta materialia, Vol. 59 N° 20 (Décembre 2011) 

Public ISBD [article]  in Acta materialia > Vol. 59 N° 20 (Décembre 2011) . - pp. 7703–7710 Titre : Growth of dislocation clusters during directional solidification of multicrystalline silicon ingots Type de document : texte imprimé Auteurs : B. Ryningen, Auteur ; G. Stokkan, Auteur ; M. Kivambe, Auteur Année de publication : 2012 Article en page(s) : pp. 7703–7710 Note générale : Métallurgie Langues : Anglais (eng) Mots-clés : Crystal  growth  Dislocation  structure  Dislocations  Silicon  Directional  solidification Résumé : Highly detrimental dislocation clusters are frequently observed in lab-scale as well as industrially produced multicrystalline silicon ingots for solar cell applications. This paper presents an investigation of dislocation clusters and how they develop over the whole height of a pilot-scale ingot. A 12-kg ingot, cast in a pilot-scale directional solidification furnace using a standard slip cast silica crucible and standard coating containing silicon nitride powder, was studied with respect to dislocation clusters. Dislocation clusters originating from grain boundaries were identified and followed from an early stage to the top of the ingot. One possible model for growth and multiplication of the dislocations in the clusters during solidification where slip on the 〈1 1 0〉 system must be allowed is described in detail. Another possible mechanism is also discussed. ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S135964541100629X [article] Growth of dislocation clusters during directional solidification of multicrystalline silicon ingots [texte imprimé] / B. Ryningen, Auteur ; G. Stokkan, Auteur ; M. Kivambe, Auteur . - 2012 . - pp. 7703–7710. Métallurgie Langues : Anglais (eng) in Acta materialia > Vol. 59 N° 20 (Décembre 2011) . - pp. 7703–7710 Mots-clés : Crystal  growth  Dislocation  structure  Dislocations  Silicon  Directional  solidification Résumé : Highly detrimental dislocation clusters are frequently observed in lab-scale as well as industrially produced multicrystalline silicon ingots for solar cell applications. This paper presents an investigation of dislocation clusters and how they develop over the whole height of a pilot-scale ingot. A 12-kg ingot, cast in a pilot-scale directional solidification furnace using a standard slip cast silica crucible and standard coating containing silicon nitride powder, was studied with respect to dislocation clusters. Dislocation clusters originating from grain boundaries were identified and followed from an early stage to the top of the ingot. One possible model for growth and multiplication of the dislocations in the clusters during solidification where slip on the 〈1 1 0〉 system must be allowed is described in detail. Another possible mechanism is also discussed. ISSN : 1359-6454 En ligne : http://www.sciencedirect.com/science/article/pii/S135964541100629X