Article : texte imprimé

Near-field radiative transfer between heavily doped SiGe at elevated temperatures

Z. M. Zhang, Auteur ; E. T. Enikov, Auteur ; T. Makansi, Auteur |

Dans Journal of heat transfer (Vol 134 N° 9, Septembre 2012)

SiGe alloys represent an important type of high-temperature semiconductor material for solid-state energy conversion. In the present study, the near-field radiative heat transfer between heavily doped SiGe plates is investigated. A dielectric fu[...]

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