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Near-field radiative transfer between heavily doped SiGe at elevated temperatures / Z. M. Zhang in Journal of heat transfer, Vol 134 N° 9 (Septembre 2012) 

Public ISBD [article]  in Journal of heat transfer > Vol 134 N° 9 (Septembre 2012) . - 07 p. Titre : Near-field radiative transfer between heavily doped SiGe at elevated temperatures Type de document : texte imprimé Auteurs : Z. M. Zhang, Auteur ; E. T. Enikov, Auteur ; T. Makansi, Auteur Année de publication : 2012 Article en page(s) : 07 p. Note générale : heat transfer Langues : Anglais (eng) Mots-clés : doped  SiGe;  high  temperature;  nanoscale;  near  field;  thermal  radiation Index. décimale : 536 Chaleur. Thermodynamique Résumé : SiGe alloys represent an important type of high-temperature semiconductor material for solid-state energy conversion. In the present study, the near-field radiative heat transfer between heavily doped SiGe plates is investigated. A dielectric function model is formulated based on the previously reported room-temperature mobility and temperature-dependent electric resistivity of several silicon-rich alloys with different doping type and concentration. Fluctuational electrodynamics is used to evaluate the near-field noncontact heat transfer coefficient. The variation of the heat transfer coefficient with doping concentration and temperature is explained according to the change in the optical constants and in the spectral distribution of the near-field heat flux. DEWEY : 536 ISSN : 0022-1481 En ligne : http://asmedl.org/getabs/servlet/GetabsServlet?prog=normal&id=JHTRAO000134000009 [...] [article] Near-field radiative transfer between heavily doped SiGe at elevated temperatures [texte imprimé] / Z. M. Zhang, Auteur ; E. T. Enikov, Auteur ; T. Makansi, Auteur . - 2012 . - 07 p. heat transfer Langues : Anglais (eng) in Journal of heat transfer > Vol 134 N° 9 (Septembre 2012) . - 07 p. Mots-clés : doped  SiGe;  high  temperature;  nanoscale;  near  field;  thermal  radiation Index. décimale : 536 Chaleur. Thermodynamique Résumé : SiGe alloys represent an important type of high-temperature semiconductor material for solid-state energy conversion. In the present study, the near-field radiative heat transfer between heavily doped SiGe plates is investigated. A dielectric function model is formulated based on the previously reported room-temperature mobility and temperature-dependent electric resistivity of several silicon-rich alloys with different doping type and concentration. Fluctuational electrodynamics is used to evaluate the near-field noncontact heat transfer coefficient. The variation of the heat transfer coefficient with doping concentration and temperature is explained according to the change in the optical constants and in the spectral distribution of the near-field heat flux. DEWEY : 536 ISSN : 0022-1481 En ligne : http://asmedl.org/getabs/servlet/GetabsServlet?prog=normal&id=JHTRAO000134000009 [...]