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Nanostructured ZnO thin films for optical, electrical, and photoelectrochemical applications from a new Zn complex / Muhammad Shahid in Industrial & engineering chemistry research, Vol. 51 N° 50 (Décembre 2012) 

Public ISBD [article]  in Industrial & engineering chemistry research > Vol. 51 N° 50 (Décembre 2012) . - pp. 16361–16368 Titre : Nanostructured ZnO thin films for optical, electrical, and photoelectrochemical applications from a new Zn complex Type de document : texte imprimé Auteurs : Muhammad Shahid, Auteur ; Mazhar Hamid, Auteur ; Asif A. Tahir, Auteur Année de publication : 2013 Article en page(s) : pp. 16361–16368 Note générale : Industrial chemistry Langues : Anglais (eng) Mots-clés : Thin  film Résumé : New hexanuclear zinc complex, Zn6(OAc)8(μ-O)2(dmae)4 (1) (OAc = acetato, dmae = N,N-dimethyl aminoethanolato) has been synthesized and characterized by its melting point, elemental analysis, Fourier transform infrared spectroscopy, atmospheric-pressure chemical-ionization mass spectrometry, thermal gravimetric analysis, and single crystal X-ray analysis. The complex (1) crystallizes in the monoclinic space group C2/c. The high solubility of complex (1) in organic solvents such as alcohol, THF, and toluene and low decomposition temperature as compared to Zn(OAc)2 make it a promising single source candidate for the deposition of nanostructured ZnO thin films by aerosol-assisted chemical vapor deposition. Films with various nanostructures, morphology, and crystallographic orientation have been deposited by controlling the deposition temperature. The deposited films have been characterized by X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analysis. The optical characterization of ZnO films deposited on the FTO substrate show a direct band gap of 3.31 eV, and the photoelectrochemical study revealed that the photocurrent onset is at about −0.32 V, whereas no photocurrent saturation was observed. The I–V measurements designated the deposited films as ohmic semiconductors. ISSN : 0888-5885 En ligne : http://cat.inist.fr/?aModele=afficheN&cpsidt=26732163 [article] Nanostructured ZnO thin films for optical, electrical, and photoelectrochemical applications from a new Zn complex [texte imprimé] / Muhammad Shahid, Auteur ; Mazhar Hamid, Auteur ; Asif A. Tahir, Auteur . - 2013 . - pp. 16361–16368. Industrial chemistry Langues : Anglais (eng) in Industrial & engineering chemistry research > Vol. 51 N° 50 (Décembre 2012) . - pp. 16361–16368 Mots-clés : Thin  film Résumé : New hexanuclear zinc complex, Zn6(OAc)8(μ-O)2(dmae)4 (1) (OAc = acetato, dmae = N,N-dimethyl aminoethanolato) has been synthesized and characterized by its melting point, elemental analysis, Fourier transform infrared spectroscopy, atmospheric-pressure chemical-ionization mass spectrometry, thermal gravimetric analysis, and single crystal X-ray analysis. The complex (1) crystallizes in the monoclinic space group C2/c. The high solubility of complex (1) in organic solvents such as alcohol, THF, and toluene and low decomposition temperature as compared to Zn(OAc)2 make it a promising single source candidate for the deposition of nanostructured ZnO thin films by aerosol-assisted chemical vapor deposition. Films with various nanostructures, morphology, and crystallographic orientation have been deposited by controlling the deposition temperature. The deposited films have been characterized by X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analysis. The optical characterization of ZnO films deposited on the FTO substrate show a direct band gap of 3.31 eV, and the photoelectrochemical study revealed that the photocurrent onset is at about −0.32 V, whereas no photocurrent saturation was observed. The I–V measurements designated the deposited films as ohmic semiconductors. ISSN : 0888-5885 En ligne : http://cat.inist.fr/?aModele=afficheN&cpsidt=26732163