Documents disponibles écrits par cet auteur

Effet of frequency on the substrate current in MOS devices / Arezki Benfdila 

Public ISBD Titre : Effet of frequency on the substrate current in MOS devices Type de document : texte imprimé Auteurs : Arezki Benfdila, Auteur ; Ved Mitra, Directeur de thèse Editeur : Institut National d'Electricité et d'Electronique INELEC Année de publication : 1992 Importance : 150 f. Présentation : ill. Format : 27 cm. Note générale : Mémoire de Magister : Électronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992 Bibliogr. f. 151 - 157 Annexe f. 159 - 167 Langues : Anglais (eng) Mots-clés : Metal  oxide  semiconductor  ;  Charge  pumping  technique  ;  Circuits  electrinics Index. décimale : M003992 Résumé : Control of the electrical properties of the MOS (Metal Oxide Semiconductor) systems has been one of the major factors that has led to stable and high performance integrated circuits. The MOS capacitor (or MOS Diode) is used in both monitoring integrated circuit fabrication and studying the electrical properties of the MOS system. During this study an unusual phenomenon marked by the presence of a new current has been observed. This current is found to exhibit quite distinct properties so as to distinguish it not only from the charge pumping current but also from any hitherto known substrate current. The present work is devoted to carry out at first an extensive experimentation to serve the purpose of as much more fact-finding and data collection as possible. The data and information so collected is then put to some practical applications. However, before taking up the proposed work, a few earlier chapters are devoted to the background study of MOS structure and other related phenomena which are needed for the further understanding and development of the subject. In chapter 2, a study of the MOS structure operated under different modes is presented. As the present study involves do conduction through the oxide, various do conduction phenomena in the oxide are described in chapter 3. One of the characterization technique recently developed, using the substrate current as a means to extract information, is the charge-pumping technique. As the present study is also based on the measurement of the substrate current, which is supposed to arise due to some process of charging and discharging of the surface traps in charge pumping technique, the present technique based on the observed new phenomenon may be supposed as an alternate approach to the charge pumping technique. Based on these considerations the charge pumping technique needs special treatment which is presented in chapter 4. After preparing the required background, chapter 5 is used to describe the experrimental set-up and devices used in the present experimentation. All experimental details how the whole experimental arrangement is made to operate and give output results automatically are also given in the same chapter. The different results obtained in this work along with the various conclusions drawn on the basis of these results are presented in chapter 6. In chapter 7, one of the most important use of the present study, which is the determination of the flatband and threshold voltages in MOS devices, is presented. Finally, chapter 8 concludes with certain remarks on the future scope and usefulness of the present study. However they are rather qualitative because of the poor understanding of the physical phenomena involved. Effet of frequency on the substrate current in MOS devices [texte imprimé] / Arezki Benfdila, Auteur ; Ved Mitra, Directeur de thèse . - [S.l.] : Institut National d'Electricité et d'Electronique INELEC, 1992 . - 150 f. : ill. ; 27 cm. Mémoire de Magister : Électronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992 Bibliogr. f. 151 - 157 Annexe f. 159 - 167 Langues : Anglais (eng) Mots-clés : Metal  oxide  semiconductor  ;  Charge  pumping  technique  ;  Circuits  electrinics Index. décimale : M003992 Résumé : Control of the electrical properties of the MOS (Metal Oxide Semiconductor) systems has been one of the major factors that has led to stable and high performance integrated circuits. The MOS capacitor (or MOS Diode) is used in both monitoring integrated circuit fabrication and studying the electrical properties of the MOS system. During this study an unusual phenomenon marked by the presence of a new current has been observed. This current is found to exhibit quite distinct properties so as to distinguish it not only from the charge pumping current but also from any hitherto known substrate current. The present work is devoted to carry out at first an extensive experimentation to serve the purpose of as much more fact-finding and data collection as possible. The data and information so collected is then put to some practical applications. However, before taking up the proposed work, a few earlier chapters are devoted to the background study of MOS structure and other related phenomena which are needed for the further understanding and development of the subject. In chapter 2, a study of the MOS structure operated under different modes is presented. As the present study involves do conduction through the oxide, various do conduction phenomena in the oxide are described in chapter 3. One of the characterization technique recently developed, using the substrate current as a means to extract information, is the charge-pumping technique. As the present study is also based on the measurement of the substrate current, which is supposed to arise due to some process of charging and discharging of the surface traps in charge pumping technique, the present technique based on the observed new phenomenon may be supposed as an alternate approach to the charge pumping technique. Based on these considerations the charge pumping technique needs special treatment which is presented in chapter 4. After preparing the required background, chapter 5 is used to describe the experrimental set-up and devices used in the present experimentation. All experimental details how the whole experimental arrangement is made to operate and give output results automatically are also given in the same chapter. The different results obtained in this work along with the various conclusions drawn on the basis of these results are presented in chapter 6. In chapter 7, one of the most important use of the present study, which is the determination of the flatband and threshold voltages in MOS devices, is presented. Finally, chapter 8 concludes with certain remarks on the future scope and usefulness of the present study. However they are rather qualitative because of the poor understanding of the physical phenomena involved.

Exemplaires

Code-barres	Cote	Support	Localisation	Section	Disponibilité	Spécialité	Etat_Exemplaire
M003992	M003992	Papier	Bibliothèque centrale	Mémoire de Magister	Disponible

Documents numériques

BENFDILA.Arezki.pdf URL