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Charge-extraction technique for studying the surface-states in MOS devices / Bouderbala, Rachid 

Public ISBD Titre : Charge-extraction technique for studying the surface-states in MOS devices Type de document : texte imprimé Auteurs : Bouderbala, Rachid, Auteur ; Ved Mitra, Directeur de thèse Editeur : Institut National d'Electricité et d'Electronique INELEC Année de publication : 1992 Importance : 191 f. Présentation : ill. Format : 30 cm. Note générale : Mémoire de Magister : Electronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992 Bibliogr. f. 192 - 198 Langues : Anglais (eng) Mots-clés : Charge  pumping  technique  MOS  devices  ;  Oxide  properties  ;  Interface  trapped  charges Index. décimale : M004192 Résumé : The present thesis is devoted to give a comprehensive account of the charge pumping technique, scope and exploration of an alternative approach and accomplishment and development of a new technique called charge extraction technique for studying the interface properties of MOS devices. The whole thesis is presented in the form of 8 chapters. After introducing the subject in the present chapter, chapter 2 is devoted to the background study of the MOS structure itself covering all its essential features, characteristics and aspects which are relevant in the further development of the subject. In chapter 3, the properties of the Si-SiO2 and, in particular, all those factors which contribute to the non-ideality of MOS structure are examined and their effect on the electrical characteristics are discussed. We end this chapter by examining briefly the impact that the fabrication technology may have on the generation and/or on the reduction of these electrically active defects. Chapter 4 is centred around the capacitance methods. All those techniques, which are common in use such as the differentiation method, the integration method, the conductance method, and the DLTS technique, are presented in details whereas the others, which are more or less of historical interest only, are presented briefly. Chapter 5 introduces the basic concepts needed to identify, understand, and analyse the phenomenon of charge pumping technique which is followed by a mathematical analysis and a few limitations of the technique. A brief account of the other developments on charge pumping technique is also presented. Chapter 6 covers the required instrumentation for the implementation and use of the charge pumping technique along with the details concerning the actual devices and the measuring set-up. The experimental results of the charge pumping technique are presented and discussed. Finally, the results obtained by the new technique are discussed and compared to those found by the charge pumping technique. In chapter 7, a theory of the new technique, called charge-extraction technique for studying the interface traps in MOS devices, is presented. Finally chapter 8 concludes with a discussion on the usefulness and future scope of the work presented in this thesis. Charge-extraction technique for studying the surface-states in MOS devices [texte imprimé] / Bouderbala, Rachid, Auteur ; Ved Mitra, Directeur de thèse . - [S.l.] : Institut National d'Electricité et d'Electronique INELEC, 1992 . - 191 f. : ill. ; 30 cm. Mémoire de Magister : Electronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992 Bibliogr. f. 192 - 198 Langues : Anglais (eng) Mots-clés : Charge  pumping  technique  MOS  devices  ;  Oxide  properties  ;  Interface  trapped  charges Index. décimale : M004192 Résumé : The present thesis is devoted to give a comprehensive account of the charge pumping technique, scope and exploration of an alternative approach and accomplishment and development of a new technique called charge extraction technique for studying the interface properties of MOS devices. The whole thesis is presented in the form of 8 chapters. After introducing the subject in the present chapter, chapter 2 is devoted to the background study of the MOS structure itself covering all its essential features, characteristics and aspects which are relevant in the further development of the subject. In chapter 3, the properties of the Si-SiO2 and, in particular, all those factors which contribute to the non-ideality of MOS structure are examined and their effect on the electrical characteristics are discussed. We end this chapter by examining briefly the impact that the fabrication technology may have on the generation and/or on the reduction of these electrically active defects. Chapter 4 is centred around the capacitance methods. All those techniques, which are common in use such as the differentiation method, the integration method, the conductance method, and the DLTS technique, are presented in details whereas the others, which are more or less of historical interest only, are presented briefly. Chapter 5 introduces the basic concepts needed to identify, understand, and analyse the phenomenon of charge pumping technique which is followed by a mathematical analysis and a few limitations of the technique. A brief account of the other developments on charge pumping technique is also presented. Chapter 6 covers the required instrumentation for the implementation and use of the charge pumping technique along with the details concerning the actual devices and the measuring set-up. The experimental results of the charge pumping technique are presented and discussed. Finally, the results obtained by the new technique are discussed and compared to those found by the charge pumping technique. In chapter 7, a theory of the new technique, called charge-extraction technique for studying the interface traps in MOS devices, is presented. Finally chapter 8 concludes with a discussion on the usefulness and future scope of the work presented in this thesis.

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BOUDERBALA.Rachid.pdf URL

Density distribution of mobile ions in the oxide of MOS structures / Bentarzi, Hamid 

Public ISBD Titre : Density distribution of mobile ions in the oxide of MOS structures Type de document : texte imprimé Auteurs : Bentarzi, Hamid, Auteur ; Ved Mitra, Directeur de thèse Editeur : Institut National d'Electricité et d'Electronique INELEC Année de publication : 1992 Importance : 144 f. Présentation : ill. Format : 27 cm. Note générale : Mémoire de Magister : Electronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992 Bibliogr. f. 145 - 156 . Annexe f. 157 - 161 Langues : Anglais (eng) Mots-clés : Mobile  ion  --  distribution  ;  MOS  --  structures  ;  Oxides  ;  Density  --  distribution Index. décimale : M004092 Résumé : The present work aims to study the mobile ion distribution in the oxides of MOS structures. The subject is introduced with the necessary background concept of MOS structure dealing with various aspects of oxide and its charges. A review is then presented on the measuring techniques of mobile charge concentration in the oxides. This is followed by our new approaches to determine the density-distribution of the mobile ions along the oxide thickness of a MOS structure. In fact we have made two attempts each of which makes use of a different approch. In the first attempt, the equilibrium density-distribution of the mobile ions has been determined from the experimentally measured values of its flat-band voltage under three different conditions, namely, before contamination/activation, after contamination/activation and then after ion-drift due to thermal electric stressing. However in the other attempt a theoretical model for the density-dis-tribution of the mobile ions has been developed which is based on the concept that at any point in the oxide the equilibrium. Density distribution of mobile ions in the oxide of MOS structures [texte imprimé] / Bentarzi, Hamid, Auteur ; Ved Mitra, Directeur de thèse . - [S.l.] : Institut National d'Electricité et d'Electronique INELEC, 1992 . - 144 f. : ill. ; 27 cm. Mémoire de Magister : Electronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992 Bibliogr. f. 145 - 156 . Annexe f. 157 - 161 Langues : Anglais (eng) Mots-clés : Mobile  ion  --  distribution  ;  MOS  --  structures  ;  Oxides  ;  Density  --  distribution Index. décimale : M004092 Résumé : The present work aims to study the mobile ion distribution in the oxides of MOS structures. The subject is introduced with the necessary background concept of MOS structure dealing with various aspects of oxide and its charges. A review is then presented on the measuring techniques of mobile charge concentration in the oxides. This is followed by our new approaches to determine the density-distribution of the mobile ions along the oxide thickness of a MOS structure. In fact we have made two attempts each of which makes use of a different approch. In the first attempt, the equilibrium density-distribution of the mobile ions has been determined from the experimentally measured values of its flat-band voltage under three different conditions, namely, before contamination/activation, after contamination/activation and then after ion-drift due to thermal electric stressing. However in the other attempt a theoretical model for the density-dis-tribution of the mobile ions has been developed which is based on the concept that at any point in the oxide the equilibrium.

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BENTARZI.Hamid.pdf URL

Effet of frequency on the substrate current in MOS devices / Arezki Benfdila 

Public ISBD Titre : Effet of frequency on the substrate current in MOS devices Type de document : texte imprimé Auteurs : Arezki Benfdila, Auteur ; Ved Mitra, Directeur de thèse Editeur : Institut National d'Electricité et d'Electronique INELEC Année de publication : 1992 Importance : 150 f. Présentation : ill. Format : 27 cm. Note générale : Mémoire de Magister : Électronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992 Bibliogr. f. 151 - 157 Annexe f. 159 - 167 Langues : Anglais (eng) Mots-clés : Metal  oxide  semiconductor  ;  Charge  pumping  technique  ;  Circuits  electrinics Index. décimale : M003992 Résumé : Control of the electrical properties of the MOS (Metal Oxide Semiconductor) systems has been one of the major factors that has led to stable and high performance integrated circuits. The MOS capacitor (or MOS Diode) is used in both monitoring integrated circuit fabrication and studying the electrical properties of the MOS system. During this study an unusual phenomenon marked by the presence of a new current has been observed. This current is found to exhibit quite distinct properties so as to distinguish it not only from the charge pumping current but also from any hitherto known substrate current. The present work is devoted to carry out at first an extensive experimentation to serve the purpose of as much more fact-finding and data collection as possible. The data and information so collected is then put to some practical applications. However, before taking up the proposed work, a few earlier chapters are devoted to the background study of MOS structure and other related phenomena which are needed for the further understanding and development of the subject. In chapter 2, a study of the MOS structure operated under different modes is presented. As the present study involves do conduction through the oxide, various do conduction phenomena in the oxide are described in chapter 3. One of the characterization technique recently developed, using the substrate current as a means to extract information, is the charge-pumping technique. As the present study is also based on the measurement of the substrate current, which is supposed to arise due to some process of charging and discharging of the surface traps in charge pumping technique, the present technique based on the observed new phenomenon may be supposed as an alternate approach to the charge pumping technique. Based on these considerations the charge pumping technique needs special treatment which is presented in chapter 4. After preparing the required background, chapter 5 is used to describe the experrimental set-up and devices used in the present experimentation. All experimental details how the whole experimental arrangement is made to operate and give output results automatically are also given in the same chapter. The different results obtained in this work along with the various conclusions drawn on the basis of these results are presented in chapter 6. In chapter 7, one of the most important use of the present study, which is the determination of the flatband and threshold voltages in MOS devices, is presented. Finally, chapter 8 concludes with certain remarks on the future scope and usefulness of the present study. However they are rather qualitative because of the poor understanding of the physical phenomena involved. Effet of frequency on the substrate current in MOS devices [texte imprimé] / Arezki Benfdila, Auteur ; Ved Mitra, Directeur de thèse . - [S.l.] : Institut National d'Electricité et d'Electronique INELEC, 1992 . - 150 f. : ill. ; 27 cm. Mémoire de Magister : Électronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992 Bibliogr. f. 151 - 157 Annexe f. 159 - 167 Langues : Anglais (eng) Mots-clés : Metal  oxide  semiconductor  ;  Charge  pumping  technique  ;  Circuits  electrinics Index. décimale : M003992 Résumé : Control of the electrical properties of the MOS (Metal Oxide Semiconductor) systems has been one of the major factors that has led to stable and high performance integrated circuits. The MOS capacitor (or MOS Diode) is used in both monitoring integrated circuit fabrication and studying the electrical properties of the MOS system. During this study an unusual phenomenon marked by the presence of a new current has been observed. This current is found to exhibit quite distinct properties so as to distinguish it not only from the charge pumping current but also from any hitherto known substrate current. The present work is devoted to carry out at first an extensive experimentation to serve the purpose of as much more fact-finding and data collection as possible. The data and information so collected is then put to some practical applications. However, before taking up the proposed work, a few earlier chapters are devoted to the background study of MOS structure and other related phenomena which are needed for the further understanding and development of the subject. In chapter 2, a study of the MOS structure operated under different modes is presented. As the present study involves do conduction through the oxide, various do conduction phenomena in the oxide are described in chapter 3. One of the characterization technique recently developed, using the substrate current as a means to extract information, is the charge-pumping technique. As the present study is also based on the measurement of the substrate current, which is supposed to arise due to some process of charging and discharging of the surface traps in charge pumping technique, the present technique based on the observed new phenomenon may be supposed as an alternate approach to the charge pumping technique. Based on these considerations the charge pumping technique needs special treatment which is presented in chapter 4. After preparing the required background, chapter 5 is used to describe the experrimental set-up and devices used in the present experimentation. All experimental details how the whole experimental arrangement is made to operate and give output results automatically are also given in the same chapter. The different results obtained in this work along with the various conclusions drawn on the basis of these results are presented in chapter 6. In chapter 7, one of the most important use of the present study, which is the determination of the flatband and threshold voltages in MOS devices, is presented. Finally, chapter 8 concludes with certain remarks on the future scope and usefulness of the present study. However they are rather qualitative because of the poor understanding of the physical phenomena involved.

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M003992	M003992	Papier	Bibliothèque centrale	Mémoire de Magister	Disponible

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BENFDILA.Arezki.pdf URL