Documents disponibles écrits par cet auteur

Numerical and experimental study on metal organic vapor-phase epitaxy of InGaN∕GaN multi-quantum-wells / Changsung Sean Kim in Transactions of the ASME . Journal of fluids engineering, Vol. 130 N° 8 (Août 2008) 

Public ISBD [article]  in Transactions of the ASME . Journal of fluids engineering > Vol. 130 N° 8 (Août 2008) . - 8 p. Titre : Numerical and experimental study on metal organic vapor-phase epitaxy of InGaN∕GaN multi-quantum-wells Type de document : texte imprimé Auteurs : Changsung Sean Kim, Auteur ; Jongpa Hong, Auteur ; Jihye Shim, Auteur Année de publication : 2009 Article en page(s) : 8 p. Note générale : Fluids engineering Langues : Anglais (eng) Mots-clés : Vapors;  metals;  wells;  semiconductor  wafers;  epitaxy;  surface  science;  temperature;  modeling;  temperature  distribution;  heating;  indium  gallium  nitride;  light-emitting  diodes;  computational  fluid  dynamics;  engineering  simulation;  equations;  measurement;  gallium  nitride;  rotation;  electromagnetic  induction;  databases Résumé : A numerical and experimental study has been performed to characterize the metal organic vapor-phase epitaxy (MOVPE) growth of InGaN∕GaN multi-quantum-wells. One of the major objectives of the present study is to predict the optimal operating conditions that would be suitable for the fabrication of GaN-based light-emitting diodes using three different reactors, vertical, horizontal, and planetary. Computational fluid dynamics (CFD) simulations considering gas-phase chemical reactions and surface chemistry were carried out and compared with experimental measurements. Through a lot of CFD simulations, the database for the multiparametric dependency of indium incorporation and growth rate in InGaN∕GaN layers has been established in a wide range of growth conditions. Also, a heating system using radio frequency power was verified to obtain the uniform temperature distribution by simulating the electromagnetic field as well as gas flow fields. The present multidisciplinary approach has been applied to the development of a novel-concept MOVPE system as well as performance enhancement of existing commercial reactors. En ligne : http://fluidsengineering.asmedigitalcollection.asme.org/Issue.aspx?issueID=27329 [...] [article] Numerical and experimental study on metal organic vapor-phase epitaxy of InGaN∕GaN multi-quantum-wells [texte imprimé] / Changsung Sean Kim, Auteur ; Jongpa Hong, Auteur ; Jihye Shim, Auteur . - 2009 . - 8 p. Fluids engineering Langues : Anglais (eng) in Transactions of the ASME . Journal of fluids engineering > Vol. 130 N° 8 (Août 2008) . - 8 p. Mots-clés : Vapors;  metals;  wells;  semiconductor  wafers;  epitaxy;  surface  science;  temperature;  modeling;  temperature  distribution;  heating;  indium  gallium  nitride;  light-emitting  diodes;  computational  fluid  dynamics;  engineering  simulation;  equations;  measurement;  gallium  nitride;  rotation;  electromagnetic  induction;  databases Résumé : A numerical and experimental study has been performed to characterize the metal organic vapor-phase epitaxy (MOVPE) growth of InGaN∕GaN multi-quantum-wells. One of the major objectives of the present study is to predict the optimal operating conditions that would be suitable for the fabrication of GaN-based light-emitting diodes using three different reactors, vertical, horizontal, and planetary. Computational fluid dynamics (CFD) simulations considering gas-phase chemical reactions and surface chemistry were carried out and compared with experimental measurements. Through a lot of CFD simulations, the database for the multiparametric dependency of indium incorporation and growth rate in InGaN∕GaN layers has been established in a wide range of growth conditions. Also, a heating system using radio frequency power was verified to obtain the uniform temperature distribution by simulating the electromagnetic field as well as gas flow fields. The present multidisciplinary approach has been applied to the development of a novel-concept MOVPE system as well as performance enhancement of existing commercial reactors. En ligne : http://fluidsengineering.asmedigitalcollection.asme.org/Issue.aspx?issueID=27329 [...]