Numerical and experimental study on metal organic vapor-phase epitaxy of InGaN∕GaN multi-quantum-wells / Changsung Sean Kim in Transactions of the ASME . Journal of fluids engineering, Vol. 130 N° 8 (Août 2008)  

Public ISBD [article]  inTransactions of the ASME . Journal of fluids engineering > Vol. 130 N° 8 (Août 2008) . - 8 p. Titre : Numerical and experimental study on metal organic vapor-phase epitaxy of InGaN∕GaN multi-quantum-wells Type de document : texte imprimé Auteurs : Changsung Sean Kim, Auteur ; Jongpa Hong, Auteur ; Jihye Shim, Auteur Année de publication : 2009 Article en page(s) : 8 p. Note générale : Fluids engineering Langues : Anglais (eng) Mots-clés : Vapors  metals  wells  semiconductor wafers  epitaxy  surface science  temperature  modeling  temperature distribution  heating  indium gallium nitride  light-emitting diodes  computational fluid dynamics  engineering simulation  equations  measurement  rotation  electromagnetic induction  databases Résumé : A numerical and experimental study has been performed to characterize the metal organic vapor-phase epitaxy (MOVPE) growth of InGaN∕GaN multi-quantum-wells. One of the major objectives of the present study is to predict the optimal operating conditions that would be suitable for the fabrication of GaN-based light-emitting diodes using three different reactors, vertical, horizontal, and planetary. Computational fluid dynamics (CFD) simulations considering gas-phase chemical reactions and surface chemistry were carried out and compared with experimental measurements. Through a lot of CFD simulations, the database for the multiparametric dependency of indium incorporation and growth rate in InGaN∕GaN layers has been established in a wide range of growth conditions. Also, a heating system using radio frequency power was verified to obtain the uniform temperature distribution by simulating the electromagnetic field as well as gas flow fields. The present multidisciplinary approach has been applied to the development of a novel-concept MOVPE system as well as performance enhancement of existing commercial reactors. En ligne : http://fluidsengineering.asmedigitalcollection.asme.org/Issue.aspx?issueID=27329 [...] [article] Numerical and experimental study on metal organic vapor-phase epitaxy of InGaN∕GaN multi-quantum-wells [texte imprimé] / Changsung Sean Kim, Auteur ; Jongpa Hong, Auteur ; Jihye Shim, Auteur . - 2009 . - 8 p. Fluids engineering Langues : Anglais (eng) in Transactions of the ASME . Journal of fluids engineering > Vol. 130 N° 8 (Août 2008) . - 8 p. Mots-clés : Vapors  metals  wells  semiconductor wafers  epitaxy  surface science  temperature  modeling  temperature distribution  heating  indium gallium nitride  light-emitting diodes  computational fluid dynamics  engineering simulation  equations  measurement  rotation  electromagnetic induction  databases Résumé : A numerical and experimental study has been performed to characterize the metal organic vapor-phase epitaxy (MOVPE) growth of InGaN∕GaN multi-quantum-wells. One of the major objectives of the present study is to predict the optimal operating conditions that would be suitable for the fabrication of GaN-based light-emitting diodes using three different reactors, vertical, horizontal, and planetary. Computational fluid dynamics (CFD) simulations considering gas-phase chemical reactions and surface chemistry were carried out and compared with experimental measurements. Through a lot of CFD simulations, the database for the multiparametric dependency of indium incorporation and growth rate in InGaN∕GaN layers has been established in a wide range of growth conditions. Also, a heating system using radio frequency power was verified to obtain the uniform temperature distribution by simulating the electromagnetic field as well as gas flow fields. The present multidisciplinary approach has been applied to the development of a novel-concept MOVPE system as well as performance enhancement of existing commercial reactors. En ligne : http://fluidsengineering.asmedigitalcollection.asme.org/Issue.aspx?issueID=27329 [...]

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