| Titre : |
Hybrid-mode analysis of microwave and millimeter-wave structures of realistic configuration |
| Type de document : |
texte imprimé |
| Auteurs : |
Ouadi, Abderrahmane, Auteur ; Bourdoucen, H., Directeur de thèse |
| Editeur : |
Institut National d'Electricité et d'Electronique INELEC |
| Année de publication : |
1995 |
| Importance : |
139 f. |
| Présentation : |
ill. |
| Format : |
30 cm. |
| Note générale : |
Mémoire de Magister : Électronique : Boumerdès, Institut National d’Électricité et d’Électronique : 1995
Bibliogr. [8] f. Annexe [1] f |
| Langues : |
Anglais (eng) |
| Mots-clés : |
Analysis of microwave Millimeter-wave structures Realistic configuration Structures based on isotropic Anisotropic substrates finline |
| Index. décimale : |
M005095 |
| Résumé : |
In this research work, the rigorous hybrid-mode full-wave analysis is used for an accurate characterization of planar and quasi-planar microwave and millimeter-wave structures, required by the spectacular growth of microwave technology. The method of lines is used as a mathematical tool for solving the associated eigenvalue problems, for modelling the dispersive properties of the aforementioned structures. The frequency dependent characterization of general planar multilayer multiconductor waveguiding structures based on isotropic and/or anisotropic substrates, has been established by using directly field components or suitable Hertzian potential functions formulations. This technique has also been applied for the analysis of structures with finite metallization thickness, in order to improve the modelling of planar microwave circuit structures that are of reduced size and operating at higher frequencies. Furthermore, the E-plane planar circuits, particularly finline structures, have been investigated with practical considerations.
In addition to the substrate anisotropy and finite metal thickness parameters, the sidewall grooves, used in an actual realization to support mechanically the substrate, has been accounted for an efficient analysis of this kind of structures. Particular interest is directed to the analysis of isolated unilateral finline configurations which are suitable for mounting semiconductor devices, where one or both fins are isolated by a gasket which allows a dc voltage to be developed across the fins. The numerical results obtained by the developed algorithm are found to agree excellently with the published data for a wide range of planar microwave and millimeter-wave structures. The effect of the technological parameters such as substrate anisotropy, strip thickness, side-wall groove depth and insulating gasket height have been also discussed. |
Hybrid-mode analysis of microwave and millimeter-wave structures of realistic configuration [texte imprimé] / Ouadi, Abderrahmane, Auteur ; Bourdoucen, H., Directeur de thèse . - Institut National d'Electricité et d'Electronique INELEC, 1995 . - 139 f. : ill. ; 30 cm. Mémoire de Magister : Électronique : Boumerdès, Institut National d’Électricité et d’Électronique : 1995
Bibliogr. [8] f. Annexe [1] f Langues : Anglais ( eng)
| Mots-clés : |
Analysis of microwave Millimeter-wave structures Realistic configuration Structures based on isotropic Anisotropic substrates finline |
| Index. décimale : |
M005095 |
| Résumé : |
In this research work, the rigorous hybrid-mode full-wave analysis is used for an accurate characterization of planar and quasi-planar microwave and millimeter-wave structures, required by the spectacular growth of microwave technology. The method of lines is used as a mathematical tool for solving the associated eigenvalue problems, for modelling the dispersive properties of the aforementioned structures. The frequency dependent characterization of general planar multilayer multiconductor waveguiding structures based on isotropic and/or anisotropic substrates, has been established by using directly field components or suitable Hertzian potential functions formulations. This technique has also been applied for the analysis of structures with finite metallization thickness, in order to improve the modelling of planar microwave circuit structures that are of reduced size and operating at higher frequencies. Furthermore, the E-plane planar circuits, particularly finline structures, have been investigated with practical considerations.
In addition to the substrate anisotropy and finite metal thickness parameters, the sidewall grooves, used in an actual realization to support mechanically the substrate, has been accounted for an efficient analysis of this kind of structures. Particular interest is directed to the analysis of isolated unilateral finline configurations which are suitable for mounting semiconductor devices, where one or both fins are isolated by a gasket which allows a dc voltage to be developed across the fins. The numerical results obtained by the developed algorithm are found to agree excellently with the published data for a wide range of planar microwave and millimeter-wave structures. The effect of the technological parameters such as substrate anisotropy, strip thickness, side-wall groove depth and insulating gasket height have been also discussed. |
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