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Particle dynamics in a chemical vapor deposition reactor / Yousef Ashrafi in Industrial & engineering chemistry research, Vol. 48 N° 13 (Juillet 2009) 

Public ISBD [article]  in Industrial & engineering chemistry research > Vol. 48 N° 13 (Juillet 2009) . - pp. 5969–5974 Titre : Particle dynamics in a chemical vapor deposition reactor : a multiscale approach Type de document : texte imprimé Auteurs : Yousef Ashrafi, Auteur ; Luke Achenie, Auteur Année de publication : 2009 Article en page(s) : pp. 5969–5974 Note générale : Chemical engineering Langues : Anglais (eng) Mots-clés : Zinc  sulfide  Chemical  vapor  deposition  method  Deposited  film Résumé : Compared to other semiconductors, zinc sulfide has a large direct band gap which makes it useful in a broad range of optical applications which demand high quality zinc sulfide films which are produced through the chemical vapor deposition method. In order to achieve high quality films with low defects, a better understanding of the deposition process is necessary. A common cause of defects in the deposited film is due to the fact that the morphology of adducts in the gas phase is different from that of the deposited film. These adducts affect the deposition efficiency and film quality. This paper strives to understand the impact of adducts through a multiscale modeling approach which is used to explain the possible link between the cluster size and the morphological defects on the deposited film. This understanding can be used within a simulation framework to optimize reaction conditions that minimize film defects. En ligne : http://pubs.acs.org/doi/abs/10.1021/ie8015522 [article] Particle dynamics in a chemical vapor deposition reactor : a multiscale approach [texte imprimé] / Yousef Ashrafi, Auteur ; Luke Achenie, Auteur . - 2009 . - pp. 5969–5974. Chemical engineering Langues : Anglais (eng) in Industrial & engineering chemistry research > Vol. 48 N° 13 (Juillet 2009) . - pp. 5969–5974 Mots-clés : Zinc  sulfide  Chemical  vapor  deposition  method  Deposited  film Résumé : Compared to other semiconductors, zinc sulfide has a large direct band gap which makes it useful in a broad range of optical applications which demand high quality zinc sulfide films which are produced through the chemical vapor deposition method. In order to achieve high quality films with low defects, a better understanding of the deposition process is necessary. A common cause of defects in the deposited film is due to the fact that the morphology of adducts in the gas phase is different from that of the deposited film. These adducts affect the deposition efficiency and film quality. This paper strives to understand the impact of adducts through a multiscale modeling approach which is used to explain the possible link between the cluster size and the morphological defects on the deposited film. This understanding can be used within a simulation framework to optimize reaction conditions that minimize film defects. En ligne : http://pubs.acs.org/doi/abs/10.1021/ie8015522