Article : texte imprimé

Reduction of chemical reaction mechanism for halide-assisted silicon carbide epitaxial film deposition

Rong Wang, Auteur ; Ronghui Ma, Auteur ; Michael Dudley, Auteur |

Dans Industrial & engineering chemistry research (Vol. 48 N° 8, Avril 2009)

Simulation of gas-phase and surface chemistry is an essential part in numerical study of chemical vapor deposition for film growth. When integrated with a model for transport processes such as gas flow, heat transfer, and mass transfer, it allow[...]

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