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Kinetic modeling of temperature dependence of TiCl4 and NH3 surface reaction in trap systems for CVD reactors / Changhyun Pang in Industrial & engineering chemistry research, Vol. 48 N°3 (Février 2009) 

Public ISBD [article]  in Industrial & engineering chemistry research > Vol. 48 N°3 (Février 2009) . - p. 1353–1356 Titre : Kinetic modeling of temperature dependence of TiCl4 and NH3 surface reaction in trap systems for CVD reactors Type de document : texte imprimé Auteurs : Changhyun Pang, Auteur ; Donghun Jeong, Auteur ; Heeyeop Chae, Auteur Année de publication : 2009 Article en page(s) : p. 1353–1356 Note générale : Chemical engineering Langues : Anglais (eng) Mots-clés : Kinetic  Modeling  Titanium  nitride Résumé : The chemical vapor deposition (CVD) of titanium nitride (TiN) thin film has been a widely adopted process for the fabrication of diffusion barrier layers in microelectronic fabrication processes. TiCl4(NH3)2 is known to be formed as a solid product in the downstream of the CVD chambers and causes damages to the pumping systems. To prevent such damage, trap systems are installed between the process chamber and pumps. This study focuses on the flow, temperature, and reaction kinetic modeling of the chemical formation of TiCl4(NH3)2 in the trap system by computational fluid dynamics (CFD). The simulation results showed good agreement with the experimental data at temperatures below 120 °C. The deposition rate of TiCl4(NH3)2 is found to increase with increasing temperature of the trap body, and the activation energy determined from the experiments suggests that the chemical vapor deposition of TiCl4(NH3)2 is surface-reaction-controlled. En ligne : http://pubs.acs.org/doi/abs/10.1021/ie800729y [article] Kinetic modeling of temperature dependence of TiCl4 and NH3 surface reaction in trap systems for CVD reactors [texte imprimé] / Changhyun Pang, Auteur ; Donghun Jeong, Auteur ; Heeyeop Chae, Auteur . - 2009 . - p. 1353–1356. Chemical engineering Langues : Anglais (eng) in Industrial & engineering chemistry research > Vol. 48 N°3 (Février 2009) . - p. 1353–1356 Mots-clés : Kinetic  Modeling  Titanium  nitride Résumé : The chemical vapor deposition (CVD) of titanium nitride (TiN) thin film has been a widely adopted process for the fabrication of diffusion barrier layers in microelectronic fabrication processes. TiCl4(NH3)2 is known to be formed as a solid product in the downstream of the CVD chambers and causes damages to the pumping systems. To prevent such damage, trap systems are installed between the process chamber and pumps. This study focuses on the flow, temperature, and reaction kinetic modeling of the chemical formation of TiCl4(NH3)2 in the trap system by computational fluid dynamics (CFD). The simulation results showed good agreement with the experimental data at temperatures below 120 °C. The deposition rate of TiCl4(NH3)2 is found to increase with increasing temperature of the trap body, and the activation energy determined from the experiments suggests that the chemical vapor deposition of TiCl4(NH3)2 is surface-reaction-controlled. En ligne : http://pubs.acs.org/doi/abs/10.1021/ie800729y