texte imprimé

Properties of silicon-on-insulator for bipolar integrated circuits

Azzedine Bellel, Auteur ; N. G. Emerson, Directeur de thèse | University of Surrey | 1986

Silicon wafers have been implanted with 400 keV molecular oxygen, with a dose of 1.8 x 10¹⁸ O⁺/cm² at an implantation temperature of about 500°C. The wafers were annealed at 1200°C for 2 hours with SiO₂ cap. Rutherford backscattering has been [...]

Plus d'information...

Ajouter un tag

Document numérique

Réserver

Disponible

---

1 (1 - 1 / 1) Par page : 25 50 100 200