| Titre : |
Density distribution of mobile ions in the oxide of MOS structures |
| Type de document : |
texte imprimé |
| Auteurs : |
Bentarzi, Hamid, Auteur ; Ved Mitra, Directeur de thèse |
| Editeur : |
Institut National d'Electricité et d'Electronique INELEC |
| Année de publication : |
1992 |
| Importance : |
144 f. |
| Présentation : |
ill. |
| Format : |
27 cm. |
| Note générale : |
Mémoire de Magister : Electronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992
Bibliogr. f. 145 - 156 . Annexe f. 157 - 161 |
| Langues : |
Anglais (eng) |
| Mots-clés : |
Mobile ion -- distribution MOS structures Oxides Density |
| Index. décimale : |
M004092 |
| Résumé : |
The present work aims to study the mobile ion distribution in the oxides of MOS structures.
The subject is introduced with the necessary background concept of MOS structure dealing with various aspects of oxide and its charges.
A review is then presented on the measuring techniques of mobile charge concentration in the oxides.
This is followed by our new approaches to determine the density-distribution of the mobile ions along the oxide thickness of a MOS structure.
In fact we have made two attempts each of which makes use of a different approch.
In the first attempt, the equilibrium density-distribution of the mobile ions has been determined from the experimentally measured values of its flat-band voltage under three different conditions, namely, before contamination/activation, after contamination/activation and then after ion-drift due to thermal electric stressing.
However in the other attempt a theoretical model for the density-dis-tribution of the mobile ions has been developed which is based on the concept that at any point in the oxide the equilibrium. |
Density distribution of mobile ions in the oxide of MOS structures [texte imprimé] / Bentarzi, Hamid, Auteur ; Ved Mitra, Directeur de thèse . - Institut National d'Electricité et d'Electronique INELEC, 1992 . - 144 f. : ill. ; 27 cm. Mémoire de Magister : Electronique : Boumerdès, Institut National d'Electricité et d'Electronique INELEC : 1992
Bibliogr. f. 145 - 156 . Annexe f. 157 - 161 Langues : Anglais ( eng)
| Mots-clés : |
Mobile ion -- distribution MOS structures Oxides Density |
| Index. décimale : |
M004092 |
| Résumé : |
The present work aims to study the mobile ion distribution in the oxides of MOS structures.
The subject is introduced with the necessary background concept of MOS structure dealing with various aspects of oxide and its charges.
A review is then presented on the measuring techniques of mobile charge concentration in the oxides.
This is followed by our new approaches to determine the density-distribution of the mobile ions along the oxide thickness of a MOS structure.
In fact we have made two attempts each of which makes use of a different approch.
In the first attempt, the equilibrium density-distribution of the mobile ions has been determined from the experimentally measured values of its flat-band voltage under three different conditions, namely, before contamination/activation, after contamination/activation and then after ion-drift due to thermal electric stressing.
However in the other attempt a theoretical model for the density-dis-tribution of the mobile ions has been developed which is based on the concept that at any point in the oxide the equilibrium. |
|
M000100 
Ajouter le résultat dans votre panier
Visionner les documents numériques
Faire une suggestion Affiner la rechercheDensity distribution of mobile ions in the oxide of MOS structures (1992)
