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Détail de l'auteur
Auteur M. E. H. Louhibi
Documents disponibles écrits par cet auteur
Affiner la rechercheDegradation failure mode of transistors / M. E. H. Louhibi
Titre : Degradation failure mode of transistors Type de document : texte imprimé Auteurs : M. E. H. Louhibi, Auteur ; A. Z. Keller, Directeur de thèse Editeur : Bradford : University of Bradford Année de publication : 1985 Importance : 174 f. Présentation : ill. Format : 30 cm. Note générale : Mémoire de Master : Electrotechnique : Bradford, University of Bradford : 1985
Annexe f. 175 - 193. Bibliogr.: f. 194 - 195Langues : Anglais (eng) Mots-clés : Semiconductor devices reliability
Solid-state semuconductorIndex. décimale : Ms01285 Résumé : Since their conception, solid-state semuconductor devices have always been regarded as having the potential of high reliability.
This expectation was not diminished by the fact that early devices were characterised by lower lifetimes since it was quickly recognised that the sources of the device failure were the result of the relatively primitive technology.
Research and development in the field of solid-state devices has concerned itself with two important problems.
On one hand we have device physics, whose aim is to understand in terms of basic physical concepts the mode of failure of the various devices.
In this way, one seeks to optimise the high reliability technology in order to achieve the best performance from each device.
The second aspect of this work is to establish a distribution which fits data and gives a very good result.
The objective of this thesis is to identify and investigate various modes of degradation which impair the reliability of the semiconductor devices and fit the log-normal and exponential distributions to the available data, using the least square and maximum likelihood methods for the estimation of the parameters.Degradation failure mode of transistors [texte imprimé] / M. E. H. Louhibi, Auteur ; A. Z. Keller, Directeur de thèse . - Bradford : University of Bradford, 1985 . - 174 f. : ill. ; 30 cm.
Mémoire de Master : Electrotechnique : Bradford, University of Bradford : 1985
Annexe f. 175 - 193. Bibliogr.: f. 194 - 195
Langues : Anglais (eng)
Mots-clés : Semiconductor devices reliability
Solid-state semuconductorIndex. décimale : Ms01285 Résumé : Since their conception, solid-state semuconductor devices have always been regarded as having the potential of high reliability.
This expectation was not diminished by the fact that early devices were characterised by lower lifetimes since it was quickly recognised that the sources of the device failure were the result of the relatively primitive technology.
Research and development in the field of solid-state devices has concerned itself with two important problems.
On one hand we have device physics, whose aim is to understand in terms of basic physical concepts the mode of failure of the various devices.
In this way, one seeks to optimise the high reliability technology in order to achieve the best performance from each device.
The second aspect of this work is to establish a distribution which fits data and gives a very good result.
The objective of this thesis is to identify and investigate various modes of degradation which impair the reliability of the semiconductor devices and fit the log-normal and exponential distributions to the available data, using the least square and maximum likelihood methods for the estimation of the parameters.Exemplaires
Code-barres Cote Support Localisation Section Disponibilité Spécialité Etat_Exemplaire Ms01285 Ms01285 Papier Bibliothèque centrale Mémoire de Master Disponible